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IPZ60R060C7XKSA1

IPZ60R060C7XKSA1
Mfr. #:
IPZ60R060C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 600V 35A TO247-4
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPZ60R060C7XKSA1 Ficha de datos
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Más información:
IPZ60R060C7XKSA1 más información
Atributo del producto
Valor de atributo
Tags
IPZ60R0, IPZ60, IPZ6, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 35A 4-Pin(4+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 600V, 35A, 162W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.052Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPZ60R060C7XKSA1
DISTI # 33655375		Infineon Technologies AGTrans MOSFET N-CH 600V 35A 4-Pin(4+Tab) TO-247 Tube240
  • 3:$4.2894
IPZ60R060C7XKSA1
DISTI # IPZ60R060C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 35A TO247-4
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$6.4006
IPZ60R060C7XKSA1
DISTI # SP001385028		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001385028)
RoHS: Compliant
Min Qty: 1		Europe - 1200
  • 1000:€3.8900
  • 500:€3.9900
  • 100:€4.0900
  • 50:€4.2900
  • 25:€4.3900
  • 10:€4.8900
  • 1:€5.9900
IPZ60R060C7XKSA1
DISTI # IPZ60R060C7XKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPZ60R060C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$4.2900
  • 1440:$4.3900
  • 960:$4.4900
  • 480:$4.6900
  • 240:$4.8900
IPZ60R060C7XKSA1
DISTI # 84AC6849		Infineon Technologies AGMOSFET, N-CH, 600V, 35A, 162W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.052ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes236
  • 500:$5.3500
  • 250:$5.8800
  • 100:$6.1500
  • 50:$6.6200
  • 25:$7.0900
  • 10:$7.4300
  • 1:$8.2200
IPZ60R060C7XKSA1
DISTI # 726-IPZ60R060C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$8.1400
  • 10:$7.3600
  • 25:$7.0200
  • 100:$6.0900
  • 250:$5.8200
  • 500:$5.3000
IPZ60R060C7XKSA1
DISTI # 2983377		Infineon Technologies AGMOSFET, N-CH, 600V, 35A, 162W, TO-247
RoHS: Compliant		226
  • 250:$6.8600
  • 100:$7.9500
  • 50:$8.5600
  • 10:$9.1500
  • 5:$10.6100
  • 1:$11.5100
IPZ60R060C7XKSA1
DISTI # XSKDRABV0021289		Infineon Technologies AGFeed Through Capacitor, 1 Function(s), 50V, 1A
RoHS: Compliant		960 in Stock0 on Order
  • 960:$6.0000
  • 240:$6.4300
IPZ60R060C7XKSA1
DISTI # 2983377		Infineon Technologies AGMOSFET, N-CH, 600V, 35A, 162W, TO-247208
  • 10:£5.6600
  • 5:£6.5600
  • 1:£7.1400
Imagen Parte # Descripción
IPZ60R060C7XKSA1

Mfr.#: IPZ60R060C7XKSA1

OMO.#: OMO-IPZ60R060C7XKSA1

 MOSFET HIGH POWER_NEW
IPZ60R060C7

Mfr.#: IPZ60R060C7

OMO.#: OMO-IPZ60R060C7-1190

 Nuevo y original
IPZ60R060C7XKSA1

Mfr.#: IPZ60R060C7XKSA1

OMO.#: OMO-IPZ60R060C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 35A TO247-4
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Available
En orden:
3500
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