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IPZ60R099C7XKSA1

IPZ60R099C7XKSA1
Mfr. #:
IPZ60R099C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPZ60R099C7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPZ60R099C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-4
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS C7
Ancho:
5.21 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Parte # Alias:
IPZ60R099C7 SP001298006
Unidad de peso:
0.217422 oz
Tags
IPZ60R09, IPZ60R0, IPZ60, IPZ6, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 600V, 22A, 110W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 110W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPZ60R099C7XKSA1
DISTI # 33150322		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$3.0435
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 22A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		166In Stock
  • 25:$5.7408
  • 10:$6.0730
  • 1:$6.7600
IPZ60R099C7XKSA1
DISTI # V36:1790_06376970		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$2.8310
  • 120000:$2.8350
  • 24000:$3.3350
  • 2400:$4.3200
  • 240:$4.4900
IPZ60R099C7XKSA1
DISTI # SP001298006		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001298006)
RoHS: Compliant
Min Qty: 1		Europe - 40
  • 500:€2.7900
  • 1000:€2.7900
  • 100:€2.8900
  • 50:€2.9900
  • 25:€3.0900
  • 10:€3.3900
  • 1:€4.2900
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPZ60R099C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.9900
  • 1440:$3.0900
  • 960:$3.1900
  • 480:$3.2900
  • 240:$3.4900
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPZ60R099C7XKSA1)
RoHS: Compliant
Min Qty: 113
Container: Bulk		Americas - 0
  • 565:$2.7900
  • 1130:$2.7900
  • 339:$2.8900
  • 226:$2.9900
  • 113:$3.0900
IPZ60R099C7XKSA1
DISTI # 84AC6850		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, 110W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes240
  • 500:$4.0700
  • 250:$4.5300
  • 100:$4.7800
  • 50:$5.0200
  • 25:$5.2700
  • 10:$5.5100
  • 1:$6.4900
IPZ60R099C7XKSA1
DISTI # 726-IPZ60R099C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW129
  • 1:$6.4300
  • 10:$5.4600
  • 100:$4.7300
  • 250:$4.4900
  • 500:$4.0300
IPZ60R099C7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		17520
  • 1000:$2.9200
  • 500:$3.0800
  • 100:$3.2000
  • 25:$3.3400
  • 1:$3.6000
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,22A,110W,PG-TO247-4136
  • 30:$4.7300
  • 10:$4.8100
  • 3:$5.1400
  • 1:$5.2900
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7		Infineon Technologies AGN-Ch 600V 22A 110W 0,099R TO247-4
RoHS: Compliant		237
  • 1:€7.2900
  • 10:€4.2900
  • 50:€2.7900
  • 100:€2.6700
IPZ60R099C7XKSA1
DISTI # 2983378		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, 110W, TO-247240
  • 500:£2.9600
  • 250:£3.2800
  • 100:£3.4600
  • 10:£4.0000
  • 1:£5.1900
IPZ60R099C7XKSA1
DISTI # 2983378		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, 110W, TO-247
RoHS: Compliant		240
  • 1000:$4.8700
  • 500:$5.0600
  • 250:$5.6300
  • 100:$5.9300
  • 10:$6.8500
  • 1:$8.9000
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Disponibilidad
Valores:
129
En orden:
2112
Ingrese la cantidad:
El precio actual de IPZ60R099C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,43 US$
6,43 US$
10
5,46 US$
54,60 US$
100
4,73 US$
473,00 US$
250
4,49 US$
1 122,50 US$
500
4,03 US$
2 015,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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