PartNumber | IPI65R099C6XKSA1 | IPI65R110CFDXKSA1 | IPI65R150CFDXKSA1 |
Description | MOSFET N-Ch 700V 38A I2PAK-3 | MOSFET N-CH 650V 31.2A TO262 | RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3 |
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | - |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 700 V | - | - |
Id Continuous Drain Current | 38 A | - | - |
Rds On Drain Source Resistance | 99 mOhms | - | - |
Configuration | Single | - | - |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Tube | - | Tube |
Height | 9.45 mm | - | - |
Length | 10.2 mm | - | - |
Series | CoolMOS C6 | - | IPI65R150 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 4.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | IPI65R099C6XKSA1 SP000895222 | - | - |
Unit Weight | 0.073511 oz | - | 0.073511 oz |
Part Aliases | - | - | IPI65R150CFD IPI65R150CFDXK SP000907028 |
Package Case | - | - | TO-262-3 |
Id Continuous Drain Current | - | - | 72 A |
Vds Drain Source Breakdown Voltage | - | - | 700 V |
Rds On Drain Source Resistance | - | - | 150 mOhms |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
Infineon Technologies |
IPI65R190C6 | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | |
IPI65R380C6 | MOSFET N-Ch 700V 10.6A I2PAK-3 CoolMOS C6 | ||
IPI65R280E6XKSA1 | MOSFET N-Ch 700V 13.8A I2PAK-3 | ||
IPI65R190CFD | MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 | ||
IPI65R190CFDXKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
IPI65R190CFDXKSA1 | MOSFET N-CH 650V 17.5A TO262 | ||
IPI65R190CFDXKSA2 | HIGH POWER_LEGACY | ||
IPI65R110CFDXKSA1 | MOSFET N-CH 650V 31.2A TO262 | ||
IPI65R190C6XKSA1 | MOSFET N-CH 650V 20.2A TO262 | ||
IPI65R280C6XKSA1 | MOSFET N-CH 650V 13.8A TO262 | ||
IPI65R310CFDXKSA1 | MOSFET N-CH 650V 11.4A TO262 | ||
IPI65R380C6XKSA1 | MOSFET N-CH 650V 10.6A TO262 | ||
IPI65R420CFDXKSA1 | MOSFET N-CH 650V 8.7A TO262 | ||
IPI65R600C6XKSA1 | MOSFET N-CH 650V 7.3A TO262 | ||
IPI65R660CFDXKSA1 | MOSFET N-CH 650V 6A TO262 | ||
IPI65R280E6XKSA1 | MOSFET N-Ch 700V 13.8A I2PAK-3 | ||
IPI65R099C6XKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 38A I2PAK-3 | ||
IPI65R150CFDXKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3 | ||
Infineon Technologies |
IPI65R420CFDXKSA1 | MOSFET LOW POWER_LEGACY | |
IPI65R099C6XKSA1 | MOSFET N-Ch 700V 38A I2PAK-3 | ||
IPI65R190C6XKSA1 | MOSFET HIGH POWER_LEGACY | ||
IPI65R190CFDXKSA1 | MOSFET HIGH POWER_LEGACY | ||
IPI65R380C6XKSA1 | MOSFET LOW POWER_LEGACY | ||
IPI65R600C6XKSA1 | MOSFET LOW POWER_LEGACY | ||
IPI65R099C6 | - Bulk (Alt: IPI65R099C6) | ||
IPI65R099C6 , 2SD2453 | Nuevo y original | ||
IPI65R150CFD | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
IPI65R190C6,65C6190 | Nuevo y original | ||
IPI65R280C6 | Trans MOSFET N-CH 650V 13.8A 3-Pin TO-262 Tube - Bulk (Alt: IPI65R280C6) | ||
IPI65R310CFD | MOSFET N-Ch 650V 11.4A I2PAK-3 CoolMOS CFD2 | ||
IPI65R380C6 | Trans MOSFET N-CH 700V 10.6A 3-Pin TO-262 Tube (Alt: SP000785080) | ||
IPI65R420CFD | MOSFET N-Ch 650V 8.7A I2PAK-3 CoolMOS CFD2 | ||
IPI65R600C6 | MOSFET N-Ch 700V 7.3A I2PAK-3 CoolMOS C6 | ||
IPI65R660CFD | Darlington Transistors MOSFET N-Ch 650V 6A I2PAK-3 CoolMOS CFD2 | ||
IPI65R110CFD | RF Bipolar Transistors MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2 | ||
IPI65R190C6 | RF Bipolar Transistors MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | ||
IPI65R190CFD | RF Bipolar Transistors MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 |