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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPI65R660CFDXKSA1 DISTI # IPI65R660CFDXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 6A TO262 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPI65R660CFDXKSA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| IPI65R660CFD DISTI # 726-IPI65R660CFD | Infineon Technologies AG | MOSFET N-Ch 650V 6A I2PAK-3 CoolMOS CFD2 RoHS: Compliant | 0 | |
| IPI65R660CFDXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 15500 |
|
| IPI65R660CFDXKSA1 DISTI # IPI65R660CFDXKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,650V,6A,62.5W,PG-TO262-3 | 10 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPI65R190CFD OMO.#: OMO-IPI65R190CFD |
MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 |
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Mfr.#: IPI65R380C6XKSA1 OMO.#: OMO-IPI65R380C6XKSA1 |
MOSFET LOW POWER_LEGACY |
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Mfr.#: IPI65R099C6 , 2SD2453 OMO.#: OMO-IPI65R099C6-2SD2453-1190 |
Nuevo y original |
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Mfr.#: IPI65R150CFD OMO.#: OMO-IPI65R150CFD-1190 |
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: IPI65R280C6 OMO.#: OMO-IPI65R280C6-1190 |
Trans MOSFET N-CH 650V 13.8A 3-Pin TO-262 Tube - Bulk (Alt: IPI65R280C6) |
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Mfr.#: IPI65R280C6XKSA1 |
MOSFET N-CH 650V 13.8A TO262 |
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Mfr.#: IPI65R310CFDXKSA1 |
MOSFET N-CH 650V 11.4A TO262 |
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Mfr.#: IPI65R380C6XKSA1 |
MOSFET N-CH 650V 10.6A TO262 |
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Mfr.#: IPI65R110CFD OMO.#: OMO-IPI65R110CFD-317 |
RF Bipolar Transistors MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2 |
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Mfr.#: IPI65R190C6 OMO.#: OMO-IPI65R190C6-317 |
RF Bipolar Transistors MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 |
