IPI65R150CFDXKSA1

IPI65R150CFDXKSA1
Mfr. #:
IPI65R150CFDXKSA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPI65R150CFDXKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPI65R150
embalaje
Tubo
Alias ​​de parte
IPI65R150CFD IPI65R150CFDXK SP000907028
Unidad de peso
0.073511 oz
Nombre comercial
CoolMOS
Paquete-Estuche
TO-262-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Id-corriente-de-drenaje-continua
72 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Resistencia a la fuente de desagüe de Rds
150 mOhms
Polaridad del transistor
Canal N
Tags
IPI65R1, IPI65, IPI6, IPI
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262
***i-Key
MOSFET N-CH 650V 22.4A TO-262
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Parte # Mfg. Descripción Valores Precio
IPI65R150CFDXKSA1
DISTI # IPI65R150CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$2.2182
IPI65R150CFDXKSA1
DISTI # SP000907028
Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262 (Alt: SP000907028)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
IPI65R150CFDXKSA1Infineon Technologies AGPower Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
13500
  • 1000:$1.5900
  • 500:$1.6800
  • 100:$1.7500
  • 25:$1.8200
  • 1:$1.9600
IPI65R150CFDXKSA1
DISTI # 726-IPI65R150CFDXKSA
Infineon Technologies AGMOSFET N-Ch 700V 72A I2PAK-3
RoHS: Compliant
0
    Imagen Parte # Descripción
    IPI65R150CFD

    Mfr.#: IPI65R150CFD

    OMO.#: OMO-IPI65R150CFD-1190

    Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI65R150CFDXKSA1

    Mfr.#: IPI65R150CFDXKSA1

    OMO.#: OMO-IPI65R150CFDXKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de IPI65R150CFDXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,24 US$
    2,24 US$
    10
    2,12 US$
    21,23 US$
    100
    2,01 US$
    201,15 US$
    500
    1,90 US$
    949,90 US$
    1000
    1,79 US$
    1 788,00 US$
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