 | |  | |
| PartNumber | IPG20N06S4L-11 | IPG20N06S4L-26 | IPG20N06S4L-26A |
| Description | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | MOSFET N-Ch 55V 20A TDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | PG-TDSON-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 20 A | 20 A | 20 A |
| Rds On Drain Source Resistance | 11.2 mOhms | 21 mOhms, 21 mOhms | 26 mOhms |
| Vgs Gate Source Voltage | 16 V | 16 V | 10 V |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 65 W | 33 W | 33 W |
| Configuration | Dual | Dual | Dual |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPG20N06S4L11ATMA1 IPG2N6S4L11XT SP000705550 | IPG20N06S4L26ATMA1 IPG2N6S4L26XT SP000705588 | IPG20N06S4L26AATMA1 SP001023848 |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
| Qg Gate Charge | - | 20 nC, 20 nC | 15 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | OptiMOS | OptiMOS |
| Series | - | OptiMOS-T2 | OptiMOS-T2 |
| Fall Time | - | 10 ns, 10 ns | 10 ns |
| Rise Time | - | 1.5 ns, 1.5 ns | 1.5 ns |
| Typical Turn Off Delay Time | - | 18 ns, 18 ns | 18 ns |
| Typical Turn On Delay Time | - | 5 ns, 5 ns | 5 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPG20N06S4L-11 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | |
| IPG20N06S4L-26 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | ||
| IPG20N06S4L-26A | MOSFET N-Ch 55V 20A TDSON-8 | ||
| IPG20N06S4L14AATMA1 | MOSFET N-CHANNEL_55/60V | ||
| IPG20N06S4L26AATMA1 | MOSFET N-Ch 55V 20A TDSON-8 | ||
| IPG20N06S4L26ATMA1 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | ||
| IPG20N06S4L11AATMA1 | MOSFET N-CHANNEL_55/60V | ||
| IPG20N06S4L14ATMA2 | MOSFET MOSFET | ||
| IPG20N06S4L11ATMA2 | MOSFET | ||
| IPG20N06S4L11ATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N06S4L11AATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N06S4L14ATMA2 | MOSFET 2N-CH 8TDSON | ||
| IPG20N06S4L14AATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N06S4L14ATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N06S4L26ATMA1 | MOSFET 2N-CH 60V 20A TDSON-8 | ||
| IPG20N06S4L26AATMA1 | RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8 | ||
Infineon Technologies |
IPG20N06S4L14ATMA1 | MOSFET N-CHANNEL_55/60V | |
| IPG20N06S4L11ATMA1 | MOSFET N-CHANNEL_55/60V | ||
| IPG20N06S4L11ATMA1-CUT TAPE | Nuevo y original | ||
| IPG20N06S4L26AATMA1-CUT TAPE | Nuevo y original | ||
| IPG20N06S4L-11A | Nuevo y original | ||
| IPG20N06S4L-14A | Nuevo y original | ||
| IPG20N06S4L-26 | Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP T/R (Alt: IPG20N06S4L-26) | ||
| IPG20N06S4L-26A | MOSFET N-Ch 55V 20A TDSON-8 | ||
| IPG20N06S4L26XT | Nuevo y original | ||
| IPG20N06S4L-11 | RF Bipolar Transistors MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | ||
| IPG20N06S4L-14 | RF Bipolar Transistors MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 |