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IPG20N06S4L11ATMA1

IPG20N06S4L11ATMA1
Mfr. #:
IPG20N06S4L11ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2N-CH 8TDSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPG20N06S4L11ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
Automotive, AEC-Q101, OptiMOS
embalaje
Tape & Reel (TR)
Paquete-Estuche
8-PowerVDFN
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
PG-TDSON-8-4 (5.15x6.15)
Tipo FET
2 N-Channel (Dual)
Potencia máxima
65W
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
4020pF @ 25V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
20A
Rds-On-Max-Id-Vgs
11.2 mOhm @ 17A, 10V
Vgs-th-Max-Id
2.2V @ 28μA
Puerta-Carga-Qg-Vgs
53nC @ 10V
Tags
IPG20N06S4L11AT, IPG20N06S4L11, IPG20N06S4L1, IPG20N06S4L, IPG20N06S4, IPG20N06, IPG20N0, IPG20, IPG2, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS™-T2 Power-Transistor - PG-TDSON-8-4
***ical
Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
***et Europe
Trans MOSFET N-CH 60V 20A 8-Pin TDSON T/R
***ronik
DUAL 60V 20A 11.2mOhm SuperSO-8
***i-Key
MOSFET 2N-CH 8TDSON
***ark
Mosfet, Aec-Q101, Dual N-Ch, Tdson-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0095Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Powerrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, TDSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:65W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, DOPPIO CA-N TDSON-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:20A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0095ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:65W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
Parte # Mfg. Descripción Valores Precio
IPG20N06S4L11ATMA1
DISTI # IPG20N06S4L11ATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.9238
IPG20N06S4L-11
DISTI # IPG20N06S4L11ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S4L11ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.9299
  • 10000:$0.8969
  • 20000:$0.8639
  • 30000:$0.8349
  • 50000:$0.8199
IPG20N06S4L11ATMA1
DISTI # 13AC9057		Infineon Technologies AGMOSFET, AEC-Q101, DUAL N-CH, TDSON-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0095ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,PowerRoHS Compliant: Yes215
  • 1:$2.1500
  • 10:$1.8900
  • 25:$1.7100
  • 50:$1.5300
  • 100:$1.3300
  • 250:$1.1400
  • 500:$1.0400
  • 1000:$0.9840
IPG20N06S4L-11
DISTI # 726-IPG20N06S4L-11		Infineon Technologies AGMOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
RoHS: Compliant		221
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9370
  • 2500:$0.8730
  • 5000:$0.8400
IPG20N06S4L11ATMA1Infineon Technologies AGIPG20N06S4L Series 60 V 11.2 mOhm OptiMOS-T2 Power-Transistor - PG-TDSON-8-4
RoHS: Compliant		55000Reel
  • 5000:$0.9950
IPG20N06S4L11ATMA1
DISTI # 2725855		Infineon Technologies AGMOSFET, AEC-Q101, DUAL N-CH, TDSON-8
RoHS: Compliant		525
  • 5:£0.9130
  • 25:£0.8950
  • 100:£0.8760
IPG20N06S4L11ATMA1
DISTI # 2725855		Infineon Technologies AGMOSFET, AEC-Q101, DUAL N-CH, TDSON-8
RoHS: Compliant		215
  • 1:$3.1800
  • 10:$2.7700
  • 100:$2.2600
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Mfr.#: IPG20N06S2L50ATMA1

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 MOSFET 2N-CH 55V 20A TDSON-8
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de IPG20N06S4L11ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,18 US$
1,18 US$
10
1,13 US$
11,26 US$
100
1,07 US$
106,65 US$
500
1,01 US$
503,65 US$
1000
0,95 US$
948,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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