 | | |
| PartNumber | IPD78CN10NGATMA1 | IPD78CN10NGBUMA1 |
| Description | MOSFET MV POWER MOS | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 13 A | - |
| Rds On Drain Source Resistance | 78 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 8 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 31 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | OptiMOS 2 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 7 S | - |
| Development Kit | - | - |
| Fall Time | 3 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | - |
| Typical Turn On Delay Time | 9 ns | - |
| Part # Aliases | G IPD78CN10N SP001127814 | G IPD78CN10N IPD78CN10NGXT SP000096460 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD78CN10NGATMA1 | MOSFET MV POWER MOS | |
| IPD78CN10NGATMA1 | MOSFET N-CH 100V 13A TO252-3 | ||
| IPD78CN10NGBUMA1 | MOSFET N-CH 100V 13A TO252-3 | ||
Infineon Technologies |
IPD78CN10NGBUMA1 | MOSFET MV POWER MOS | |
| IPD78CN10N | Nuevo y original | ||
| IPD78CN10N G | Trans MOSFET N-CH 100V 13A 3-Pin(2+Tab) TO-252 | ||
| IPD78CN10NG | Power Field-Effect Transistor, 13A I(D), 100V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| IPD78CN10NG 78CN10N | Nuevo y original | ||
| IPD78CN10NGATMA1 , 2SD24 | Nuevo y original | ||
| IPD78CN10NGBUMA1 , 2SD24 | Nuevo y original | ||
| IPD78CN10NGXT | Nuevo y original |