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IPD78CN10NGATMA1

IPD78CN10NGATMA1
Mfr. #:
IPD78CN10NGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET MV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD78CN10NGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
13 A
Rds On - Resistencia de la fuente de drenaje:
78 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
8 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
31 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
OptiMOS 2
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
7 S
Kit de desarrollo:
-
Otoño:
3 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
13 ns
Tiempo típico de retardo de encendido:
9 ns
Parte # Alias:
G IPD78CN10N SP001127814
Unidad de peso:
0.139332 oz
Tags
IPD78CN10NG, IPD78, IPD7, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 78 mOhm 8 nC OptiMOS™ Power Mosfet - TO-252-3
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS
***ment14 APAC
MOSFET, N CH, 13A, 100V, PG-TO252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):59mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:13A; Power Dissipation Pd:31W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***(Formerly Allied Electronics)
IRFR3910PBF N-channel MOSFET Transistor; 16 A; 100 V; 3-Pin DPAK
***ure Electronics
Single N-Channel 100V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***eco
IRFR3910TRPBF,MOSFET, 100V, 15 A, 115 MOHM, 29.3 NC QG, D-PA
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:79W; No. of Pins:3Pins RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 80 V, 12.9 A, 100 mΩ, DPAK
***r Electronics
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
*** Electronic Components
MOSFET 80V N-Channel QFET Logic Level
***i-Key Marketplace
MOSFET N-CH 80V 12.9A TO252
***p One Stop Global
Trans MOSFET N-CH 100V 12A Automotive 3-Pin(2+Tab) TO-252 T/R
***ure Electronics
N-Channel 100 V 140 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3
***S
new, original packaged
Parte # Mfg. Descripción Valores Precio
IPD78CN10NGATMA1
DISTI # V72:2272_06390909		Infineon Technologies AGTrans MOSFET N-CH 100V 13A Automotive 3-Pin(2+Tab) DPAK T/R696
  • 500:$0.3467
  • 250:$0.3577
  • 100:$0.3985
  • 25:$0.5819
  • 10:$0.6865
  • 1:$0.8333
IPD78CN10NGATMA1
DISTI # V36:1790_06390909		Infineon Technologies AGTrans MOSFET N-CH 100V 13A Automotive 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.2403
  • 1250000:$0.2405
  • 250000:$0.2573
  • 25000:$0.2854
  • 2500:$0.2900
IPD78CN10NGATMA1
DISTI # IPD78CN10NGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 13A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2719In Stock
  • 1000:$0.3570
  • 500:$0.4462
  • 100:$0.5645
  • 10:$0.7360
  • 1:$0.8400
IPD78CN10NGATMA1
DISTI # IPD78CN10NGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 13A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2719In Stock
  • 1000:$0.3570
  • 500:$0.4462
  • 100:$0.5645
  • 10:$0.7360
  • 1:$0.8400
IPD78CN10NGATMA1
DISTI # IPD78CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 13A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.2744
  • 12500:$0.2816
  • 5000:$0.2924
  • 2500:$0.3141
IPD78CN10NGATMA1
DISTI # 33792149		Infineon Technologies AGTrans MOSFET N-CH 100V 13A Automotive 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.2202
IPD78CN10NGATMA1
DISTI # 26195661		Infineon Technologies AGTrans MOSFET N-CH 100V 13A Automotive 3-Pin(2+Tab) DPAK T/R696
  • 31:$0.8333
IPD78CN10NGATMA1
DISTI # IPD78CN10NGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 13A 3-Pin TO-252 T/R - Bulk (Alt: IPD78CN10NGATMA1)
RoHS: Compliant
Min Qty: 1563
Container: Bulk		Americas - 0
  • 15630:$0.2029
  • 7815:$0.2059
  • 4689:$0.2139
  • 3126:$0.2219
  • 1563:$0.2299
IPD78CN10NGATMA1
DISTI # IPD78CN10NGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 13A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD78CN10NGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2089
  • 15000:$0.2129
  • 10000:$0.2199
  • 5000:$0.2289
  • 2500:$0.2369
IPD78CN10NGATMA1
DISTI # SP001127814		Infineon Technologies AGTrans MOSFET N-CH 100V 13A 3-Pin TO-252 T/R (Alt: SP001127814)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2089
  • 15000:€0.2249
  • 10000:€0.2439
  • 5000:€0.2659
  • 2500:€0.3249
IPD78CN10NGATMA1
DISTI # 50Y2042		Infineon Technologies AGMOSFET Transistor, N Channel, 13 A, 100 V, 0.059 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 1000:$0.2670
  • 500:$0.2890
  • 250:$0.3110
  • 100:$0.3330
  • 50:$0.3940
  • 25:$0.4550
  • 10:$0.5160
  • 1:$0.6160
IPD78CN10NGATMA1
DISTI # 726-IPD78CN10NGATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		1115
  • 1:$0.7700
  • 10:$0.6400
  • 100:$0.4130
  • 1000:$0.3310
  • 2500:$0.2790
  • 10000:$0.2690
  • 25000:$0.2580
IPD78CN10NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 100V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		340
  • 1000:$0.2100
  • 500:$0.2200
  • 100:$0.2300
  • 25:$0.2400
  • 1:$0.2600
IPD78CN10NGATMA1
DISTI # 8977242P		Infineon Technologies AGMOSFET N-CHANNEL 100V 13A OPTIMOS TO252, RL1650
  • 3125:£0.1940
  • 1250:£0.2040
  • 625:£0.2290
  • 125:£0.2800
IPD78CN10NGATMA1
DISTI # IPD78CN10NGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,13A,31W,PG-TO252-3757
  • 500:$0.2692
  • 100:$0.2894
  • 10:$0.3345
  • 3:$0.3773
  • 1:$0.5383
IPD78CN10NGATMA1
DISTI # 2480837		Infineon Technologies AGMOSFET, N-CH, 100V, 13A, TO-252-31394
  • 500:£0.2490
  • 250:£0.2840
  • 100:£0.3180
  • 10:£0.5420
  • 1:£0.6790
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OMO.#: OMO-RCLAMP0502BATCT

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Mfr.#: TPD4E001DBVR

OMO.#: OMO-TPD4E001DBVR

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Mfr.#: ST1S14PHR

OMO.#: OMO-ST1S14PHR

 Switching Voltage Regulators Up to 3A Step Down 3A DC 5.5-48V 850Mhz
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Mfr.#: NRS4018T2R2MDGJ

OMO.#: OMO-NRS4018T2R2MDGJ

 Fixed Inductors 4018 2.2uH 50.4mOhms +/-20%Tol 2200mA
C1608X5R0J106M080AB

Mfr.#: C1608X5R0J106M080AB

OMO.#: OMO-C1608X5R0J106M080AB

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 6.3V 10uF X5R 20% T: 0.8mm
885012107011

Mfr.#: 885012107011

OMO.#: OMO-885012107011

 Multilayer Ceramic Capacitors MLCC - SMD/SMT WCAP-CSGP 22uF 0805 20% 10V MLCC
MCT06030C1004FP500

Mfr.#: MCT06030C1004FP500

OMO.#: OMO-MCT06030C1004FP500-VISHAY

 Thin Film Resistors - SMD .1W 1Mohm 1% 0603 50ppm Auto
RCLAMP0502BATCT

Mfr.#: RCLAMP0502BATCT

OMO.#: OMO-RCLAMP0502BATCT-SEMTECH

 TVS DIODE 5V 25V SC75
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Mfr.#: ACM2012-900-2P-T001

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 Common Mode Filters / Chokes 90ohms 190mohms 400A
Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de IPD78CN10NGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,77 US$
0,77 US$
10
0,64 US$
6,40 US$
100
0,41 US$
41,30 US$
1000
0,33 US$
331,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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