PartNumber | IPD78CN10NGATMA1 | IPD78CN10NGBUMA1 |
Description | MOSFET MV POWER MOS | MOSFET MV POWER MOS |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | - |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PG-TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - |
Id Continuous Drain Current | 13 A | - |
Rds On Drain Source Resistance | 78 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 8 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 175 C | - |
Pd Power Dissipation | 31 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Tradename | OptiMOS | OptiMOS |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Series | OptiMOS 2 | - |
Transistor Type | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 7 S | - |
Development Kit | - | - |
Fall Time | 3 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 4 ns | - |
Factory Pack Quantity | 2500 | - |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns | - |
Typical Turn On Delay Time | 9 ns | - |
Part # Aliases | G IPD78CN10N SP001127814 | G IPD78CN10N IPD78CN10NGXT SP000096460 |
Unit Weight | 0.139332 oz | 0.139332 oz |