PartNumber | IKW30N65ES5 | IKW30N65ES5XKSA1 | IKW30N65EL5XKSA1 |
Description | IGBT Transistors Trenchstop 5 IGBT | IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity re | IGBT Transistors 650V IGBT Trenchstop 5 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.35 V | 1.35 V | 1.05 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 62 A | 62 A | 85 A |
Pd Power Dissipation | 188 W | 188 W | 227 W |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | TRENCHSTOP 5 S5 | TRENCHSTOP 5 S5 | TRENCHSTOP 5 L5 |
Packaging | Tube | Tube | Tube |
Height | 5.21 mm | 20.7 mm | - |
Length | 21.1 mm | 15.87 mm | - |
Operating Temperature Range | - 40 C to + 175 C | - | - |
Width | 16.13 mm | 5.31 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
Part # Aliases | IKW30N65ES5XKSA1 SP001319678 | IKW30N65ES5 SP001319678 | IKW30N65EL5 SP001178080 |
Unit Weight | 1.340411 oz | - | 1.340411 oz |