IKW30N65ES5XKSA1

IKW30N65ES5XKSA1
Mfr. #:
IKW30N65ES5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT TRENCH 650V 62A TO247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW30N65ES5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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ECAD Model:
Más información:
IKW30N65ES5XKSA1 más información
Atributo del producto
Valor de atributo
Tags
IKW30N65E, IKW30N65, IKW30N6, IKW30N, IKW3, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650 V, 30 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO-247 package
***ark
Igbt, Single, 650V, 62A, To-247; Dc Collector Current:62A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; I C(n)=four times nominal current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs
Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization. The S5 are packed with features to help designers achieve goals without the need to increase circuit complexity.
Parte # Mfg. Descripción Valores Precio
IKW30N65ES5XKSA1
DISTI # V99:2348_09156913
Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube170
  • 1000:$2.2500
  • 500:$2.6840
  • 100:$3.1490
  • 10:$3.6220
  • 1:$4.6871
IKW30N65ES5XKSA1
DISTI # V36:1790_09156913
Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube0
    IKW30N65ES5XKSA1
    DISTI # IKW30N65ES5XKSA1-ND
    Infineon Technologies AGIGBT TRENCH 650V 62A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    1493In Stock
    • 2640:$2.2705
    • 720:$2.8268
    • 240:$3.3206
    • 25:$3.8316
    • 10:$4.0530
    • 1:$4.5100
    IKW30N65ES5XKSA1
    DISTI # 31985261
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(3+Tab) TO-247 Tube170
    • 3:$4.6871
    IKW30N65ES5XKSA1
    DISTI # IKW30N65ES5XKSA1
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 3-Pin TO-247 - Rail/Tube (Alt: IKW30N65ES5XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 1440:$1.9900
    • 2400:$1.9900
    • 960:$2.0900
    • 480:$2.1900
    • 240:$2.2900
    IKW30N65ES5XKSA1
    DISTI # SP001319678
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 62A 3-Pin TO-247 (Alt: SP001319678)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€1.5900
    • 100:€1.7900
    • 500:€1.7900
    • 50:€1.8900
    • 25:€1.9900
    • 10:€2.0900
    • 1:€2.2900
    IKW30N65ES5XKSA1
    DISTI # 12AC9675
    Infineon Technologies AGIGBT, SINGLE, 650V, 62A, TO-247,DC Collector Current:62A,Collector Emitter Saturation Voltage Vce(on):1.35V,Power Dissipation Pd:188W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes1477
    • 500:$2.3300
    • 250:$2.6100
    • 100:$2.7500
    • 50:$2.8900
    • 25:$3.0200
    • 10:$3.1600
    • 1:$3.7300
    IKW30N65ES5
    DISTI # 726-IKW30N65ES5
    Infineon Technologies AGIGBT Transistors Trenchstop 5 IGBT
    RoHS: Compliant
    425
    • 1:$4.2900
    • 10:$3.6400
    • 100:$3.1600
    • 250:$3.0000
    • 500:$2.6900
    • 1000:$2.2700
    • 2500:$2.1500
    IKW30N65ES5XKSA1
    DISTI # 726-IKW30N65ES5XKSA1
    Infineon Technologies AGIGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
    RoHS: Compliant
    436
    • 1:$4.2900
    • 10:$3.6400
    • 100:$3.1600
    • 250:$3.0000
    • 500:$2.6900
    • 1000:$2.3200
    IKW30N65ES5XKSA1
    DISTI # 2710004
    Infineon Technologies AGIGBT, SINGLE, 650V, 62A, TO-247
    RoHS: Compliant
    1477
    • 2640:$3.4300
    • 720:$4.2600
    • 240:$5.0100
    • 25:$5.7800
    • 10:$6.1100
    • 1:$6.8000
    IKW30N65ES5XKSA1
    DISTI # 2710004
    Infineon Technologies AGIGBT, SINGLE, 650V, 62A, TO-247257
    • 500:£1.6700
    • 250:£1.8700
    • 100:£1.9800
    • 10:£2.2700
    • 1:£2.6700
    Imagen Parte # Descripción
    IKW30N65ES5XKSA1

    Mfr.#: IKW30N65ES5XKSA1

    OMO.#: OMO-IKW30N65ES5XKSA1

    IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity re
    IKW30N65NL5XKSA1

    Mfr.#: IKW30N65NL5XKSA1

    OMO.#: OMO-IKW30N65NL5XKSA1

    IGBT Transistors 650V IGBT Trenchstop 5
    IKW30N65H5XKSA1

    Mfr.#: IKW30N65H5XKSA1

    OMO.#: OMO-IKW30N65H5XKSA1

    IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
    IKW30N65H5XKSA1

    Mfr.#: IKW30N65H5XKSA1

    OMO.#: OMO-IKW30N65H5XKSA1-INFINEON-TECHNOLOGIES

    IGBT TRENCH 650V 55A TO247-3
    IKW30N65WR5XKSA1

    Mfr.#: IKW30N65WR5XKSA1

    OMO.#: OMO-IKW30N65WR5XKSA1-INFINEON-TECHNOLOGIES

    IGBT TRENCH 650V 60A TO247-3
    IKW30N65ES5XKSA1

    Mfr.#: IKW30N65ES5XKSA1

    OMO.#: OMO-IKW30N65ES5XKSA1-INFINEON-TECHNOLOGIES

    IGBT TRENCH 650V 62A TO247-3
    IKW30N65H5

    Mfr.#: IKW30N65H5

    OMO.#: OMO-IKW30N65H5-1190

    650V,55A,IGBT with Anti-Parallel Diode
    IKW30N65NL5

    Mfr.#: IKW30N65NL5

    OMO.#: OMO-IKW30N65NL5-1190

    - Bulk (Alt: IKW30N65NL5)
    IKW30N65W5

    Mfr.#: IKW30N65W5

    OMO.#: OMO-IKW30N65W5-1190

    Nuevo y original
    IKW30N65EL5XKSA1

    Mfr.#: IKW30N65EL5XKSA1

    OMO.#: OMO-IKW30N65EL5XKSA1-INFINEON-TECHNOLOGIES

    IGBT Transistors 650V IGBT Trenchstop 5
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IKW30N65ES5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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