IKW30N65EL5XKSA1

IKW30N65EL5XKSA1
Mfr. #:
IKW30N65EL5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 650V IGBT Trenchstop 5
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW30N65EL5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IKW30N65EL5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.05 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
85 A
Pd - Disipación de energía:
227 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 L5
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKW30N65EL5 SP001178080
Unidad de peso:
1.340411 oz
Tags
IKW30N65E, IKW30N65, IKW30N6, IKW30N, IKW3, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
Parte # Mfg. Descripción Valores Precio
IKW30N65EL5XKSA1
DISTI # IKW30N65EL5XKSA1IN-ND
Infineon Technologies AGIGBT 650V 30A FAST DIODE TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
321In Stock
  • 1200:$3.0529
  • 720:$3.6199
  • 240:$4.2523
  • 10:$5.1900
  • 1:$5.7800
IKW30N65EL5XKSA1
DISTI # IKW30N65EL5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65EL5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$2.8900
  • 480:$2.7900
  • 960:$2.6900
  • 1440:$2.5900
  • 2400:$2.5900
IKW30N65EL5XKSA1
DISTI # SP001178080
Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001178080)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€2.5900
  • 10:€2.4900
  • 25:€2.4900
  • 50:€2.2900
  • 100:€2.2900
  • 500:€2.2900
  • 1000:€2.1900
IKW30N65EL5XKSA1
DISTI # 12AC9674
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes622
  • 100:$4.8700
  • 50:$5.1000
  • 25:$5.3200
  • 10:$5.5500
  • 1:$6.4400
IKW30N65EL5XKSA1
DISTI # 726-IKW30N65EL5XKSA1
Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant
227
  • 1:$5.4900
  • 10:$4.6700
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4400
IKW30N65EL5XKSA1
DISTI # 2709886
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant
622
  • 1200:$4.8400
  • 720:$5.7300
  • 240:$6.7300
  • 10:$8.2200
  • 1:$9.1500
IKW30N65EL5XKSA1
DISTI # 2709886
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant
622
  • 500:£2.6800
  • 250:£3.0000
  • 100:£3.1500
  • 10:£3.6400
  • 1:£4.7300
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IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity re
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OMO.#: OMO-FGA40S65SH

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IGBT Transistors 650V IGBT Trenchstop 5
IRF300P227

Mfr.#: IRF300P227

OMO.#: OMO-IRF300P227

MOSFET IFX OPTIMOS
TLP250H(TP1,F)

Mfr.#: TLP250H(TP1,F)

OMO.#: OMO-TLP250H-TP1-F-

Logic Output Optocouplers Photocoupler, Photo IC Output
TLP250H(TP1,F)

Mfr.#: TLP250H(TP1,F)

OMO.#: OMO-TLP250H-TP1-F--TOSHIBA-SEMICONDUCTOR-AND-STOR

Logic Output Optocouplers Photocoupler, Photo IC Output
IRF300P227

Mfr.#: IRF300P227

OMO.#: OMO-IRF300P227-INFINEON-TECHNOLOGIES

MOSFET N-CH 300V 50A TO247AC
Disponibilidad
Valores:
181
En orden:
2164
Ingrese la cantidad:
El precio actual de IKW30N65EL5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,49 US$
5,49 US$
10
4,67 US$
46,70 US$
100
4,05 US$
405,00 US$
250
3,84 US$
960,00 US$
500
3,44 US$
1 720,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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