IGW30N1

IGW30N100TFKSA1 vs IGW30N100T G30T100 vs IGW30N100T

 
PartNumberIGW30N100TFKSA1IGW30N100T G30T100IGW30N100T
DescriptionIGBT Transistors LoLoss IGBT TrnchStp Fieldstop techIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
ManufacturerInfineon-FEELING
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1000 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation412 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP IGBT-IGW30N100
PackagingTube-Tube
Continuous Collector Current Ic Max30 A--
BrandInfineon Technologies--
Gate Emitter Leakage Current600 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW30N100T IGW3N1TXK SP000380845--
Unit Weight0.014110 oz--
Part Aliases--IGW30N100TFKSA1 IGW30N100TXK SP000380845
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IGW30N100TFKSA1 IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
IGW30N100T G30T100 Nuevo y original
IGW30N100TS Nuevo y original
IGW30N100T IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
Infineon Technologies
Infineon Technologies
IGW30N100TFKSA1 IGBT 1000V 60A 412W TO247-3
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