IGW30N100TFKSA1

IGW30N100TFKSA1
Mfr. #:
IGW30N100TFKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW30N100TFKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1000 V
Voltaje de saturación colector-emisor:
1.8 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
412 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Tubo
Corriente continua de colector Ic Max:
30 A
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
600 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGW30N100T IGW3N1TXK SP000380845
Unidad de peso:
0.014110 oz
Tags
IGW30N1, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransIGBTChipNCH1000V60A412000mWAutomotive3Pin3TabTO247Tube
***ark
TransistorIgbt1Kv60ATo247;DcCollectorCurrent60A;CollectorEmitterSaturationVoltageVceOn155V;PowerDissipationPd412W;CollectorEmitterVoltageVBrCeo1Kv;TransistorCaseStyleto247;NoOfPins3Pins;RohsCompliantYes
***ineon
InfineonsTRENCHSTOPIGBTtechnologyleadstosignificantimprovementofstaticaswellasdynamicperformanceofthedeviceduetocombinationoftrenchtopcellandfiledstopconceptCombinationofIGBTwithsoftrecoveryEmitterControlledDiodefurtherminimizestheturnonlossesThehighestefficiencyisreachedduetothebestcompromisebetweenswitchingandconductionlossesSummaryofFeaturesLowestVcesatdropforlowerconductionlosses;Lowswitchinglosses;EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVcesat;VerysoftfastrecoveryantiparallelEmitterControlledDiode;Highruggednesstemperaturestablebehavior;LowEMIemissions;Lowgatecharge;VerytightparameterdistributionBenefitsHighestefficiencylowconductionandswitchinglosses;Comprehensiveportfolioin600Vand1200Vforflexibilityofdesign;HighdevicereliabilityTargetApplicationsUPS;SolarInverters;MajorHomeAppliances;Welding;Airconditioning;IndustrialDrives;Otherhardswitchingapplications
Parte # Mfg. Descripción Valores Precio
IGW30N100TFKSA1
DISTI # V99:2348_06378671
Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
244
  • 100:$3.9750
  • 10:$4.6210
  • 1:$6.0313
IGW30N100TFKSA1
DISTI # IGW30N100TFKSA1-ND
Infineon Technologies AGIGBT 1000V 60A 412W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IGW30N100TFKSA1
    DISTI # 26197476
    Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    244
    • 3:$6.0313
    IGW30N100TFKSA1
    DISTI # 13AC9000
    Infineon Technologies AGTRANSISTOR, IGBT, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:412W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes0
      IGW30N100T
      DISTI # 726-IGW30N100T
      Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant
      153
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1
      DISTI # 726-IGW30N100TFKSA1
      Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant
      118
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247AD
      RoHS: Compliant
      69
      • 1000:$2.3700
      • 500:$2.4900
      • 100:$2.6000
      • 25:$2.7100
      • 1:$2.9200
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