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IGW30N100TFKSA1

IGW30N100TFKSA1
Mfr. #:
IGW30N100TFKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT 1000V 60A 412W TO247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW30N100TFKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IGW30N1, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransIGBTChipNCH1000V60A412000mWAutomotive3Pin3TabTO247Tube
***ark
TransistorIgbt1Kv60ATo247;DcCollectorCurrent60A;CollectorEmitterSaturationVoltageVceOn155V;PowerDissipationPd412W;CollectorEmitterVoltageVBrCeo1Kv;TransistorCaseStyleto247;NoOfPins3Pins;RohsCompliantYes
***ineon
InfineonsTRENCHSTOPIGBTtechnologyleadstosignificantimprovementofstaticaswellasdynamicperformanceofthedeviceduetocombinationoftrenchtopcellandfiledstopconceptCombinationofIGBTwithsoftrecoveryEmitterControlledDiodefurtherminimizestheturnonlossesThehighestefficiencyisreachedduetothebestcompromisebetweenswitchingandconductionlossesSummaryofFeaturesLowestVcesatdropforlowerconductionlosses;Lowswitchinglosses;EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVcesat;VerysoftfastrecoveryantiparallelEmitterControlledDiode;Highruggednesstemperaturestablebehavior;LowEMIemissions;Lowgatecharge;VerytightparameterdistributionBenefitsHighestefficiencylowconductionandswitchinglosses;Comprehensiveportfolioin600Vand1200Vforflexibilityofdesign;HighdevicereliabilityTargetApplicationsUPS;SolarInverters;MajorHomeAppliances;Welding;Airconditioning;IndustrialDrives;Otherhardswitchingapplications
Parte # Mfg. Descripción Valores Precio
IGW30N100TFKSA1
DISTI # V99:2348_06378671		Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		244
  • 100:$3.9750
  • 10:$4.6210
  • 1:$6.0313
IGW30N100TFKSA1
DISTI # IGW30N100TFKSA1-ND		Infineon Technologies AGIGBT 1000V 60A 412W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IGW30N100TFKSA1
    DISTI # 26197476    		Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		244
    • 3:$6.0313
    IGW30N100TFKSA1
    DISTI # 13AC9000    		Infineon Technologies AGTRANSISTOR, IGBT, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:412W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes0
      IGW30N100T
      DISTI # 726-IGW30N100T      		Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant      		153
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1
      DISTI # 726-IGW30N100TFKSA1      		Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant      		118
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247AD
      RoHS: Compliant      		69
      • 1000:$2.3700
      • 500:$2.4900
      • 100:$2.6000
      • 25:$2.7100
      • 1:$2.9200
      Imagen Parte # Descripción
      IGW30N100TFKSA1

      Mfr.#: IGW30N100TFKSA1

      OMO.#: OMO-IGW30N100TFKSA1

      		 IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      IGW30N100T G30T100

      Mfr.#: IGW30N100T G30T100

      OMO.#: OMO-IGW30N100T-G30T100-1190

      		 Nuevo y original
      IGW30N100TFKSA1

      Mfr.#: IGW30N100TFKSA1

      OMO.#: OMO-IGW30N100TFKSA1-INFINEON-TECHNOLOGIES

      		 IGBT 1000V 60A 412W TO247-3
      IGW30N100TS

      Mfr.#: IGW30N100TS

      OMO.#: OMO-IGW30N100TS-1190

      		 Nuevo y original
      IGW30N100T

      Mfr.#: IGW30N100T

      OMO.#: OMO-IGW30N100T-126

      		 IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de IGW30N100TFKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,56 US$
      3,56 US$
      10
      3,38 US$
      33,77 US$
      100
      3,20 US$
      319,95 US$
      500
      3,02 US$
      1 510,90 US$
      1000
      2,84 US$
      2 844,00 US$
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