PartNumber | HGTG18N120BND | HGTG18N120BN |
Description | IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde | IGBT Transistors 54A 1200V N-Ch |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors |
RoHS | Y | E |
Technology | Si | Si |
Package / Case | TO-247-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | 2.45 V | 2.45 V |
Maximum Gate Emitter Voltage | 20 V | 20 V |
Continuous Collector Current at 25 C | 54 A | 54 A |
Pd Power Dissipation | 390 W | 390 W |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | HGTG18N120BND | HGTG18N120BN |
Packaging | Tube | Tube |
Continuous Collector Current Ic Max | 54 A | 54 A |
Height | 20.82 mm | 20.82 mm |
Length | 15.87 mm | 15.87 mm |
Width | 4.82 mm | 4.82 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 54 A | 54 A |
Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA |
Product Type | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 450 | 450 |
Subcategory | IGBTs | IGBTs |
Part # Aliases | HGTG18N120BND_NL | HGTG18N120BN_NL |
Unit Weight | 0.225401 oz | 0.225401 oz |