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HGTG18N120BND

HGTG18N120BND
Mfr. #:
HGTG18N120BND
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTG18N120BND Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.45 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
54 A
Pd - Disipación de energía:
390 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
HGTG18N120BND
Embalaje:
Tubo
Corriente continua de colector Ic Max:
54 A
Altura:
20.82 mm
Longitud:
15.87 mm
Ancho:
4.82 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
54 A
Corriente de fuga puerta-emisor:
+/- 250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
HGTG18N120BND_NL
Unidad de peso:
0.225401 oz
Tags
HGTG18N120BND, HGTG18N120B, HGTG18, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***y
    S***y
    FR

    recu rapide

    2019-06-30
    R***e
    R***e
    LT

    Thanks!

    2019-05-28
    D***v
    D***v
    RU

    Very long shipping and seller did not extend the protection period.

    2019-04-16
***Components
In a Tube of 30, ON Semiconductor HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247
***inecomponents.com
54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode
***i-Key
IGBT NPT N-CHAN 1200V 54A TO-247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***ser
IGBTs 36A, 1200V, N-Ch
***Semiconductor
IGBT, 1200V, NPT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.45V; Power Dissipation, Pd:390W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes
***rchild Semiconductor
HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:390W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:18A; Current, Icm Pulsed:160A; Device Marking:HGTG18N120BND; Power, Pd:390W; Time, Rise:22ns
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Parte # Mfg. Descripción Valores Precio
HGTG18N120BND
DISTI # HGTG18N120BND-ND		ON SemiconductorIGBT 1200V 54A 390W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1350:$3.6624
  • 900:$4.2050
  • 450:$4.6119
  • 10:$5.8330
  • 1:$6.4600
HGTG18N120BND
DISTI # HGTG18N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 450
    HGTG18N120BND
    DISTI # 58K8901    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$5.6400
    • 900:$5.1600
    HGTG18N120BND
    DISTI # 58K8901    		ON SemiconductorSINGLE IGBT, 1.2KV, 54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
    • 1:$7.7100
    • 10:$7.0000
    • 25:$6.6800
    • 50:$6.2500
    • 100:$5.8200
    • 250:$5.5800
    • 500:$5.1000
    HGTG18N120BND
    DISTI # 97K1398    		ON SemiconductorIGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes0
    • 1:$6.5500
    • 10:$5.9500
    • 25:$5.6800
    • 50:$5.3300
    • 100:$4.9700
    • 250:$4.7600
    • 500:$4.3600
    HGTG18N120BND
    DISTI # 512-HGTG18N120BND    		ON SemiconductorIGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
    RoHS: Compliant    		436
    • 1:$6.1500
    • 10:$5.5600
    • 25:$5.3000
    • 100:$4.6000
    • 250:$4.4000
    HGTG18N120BND
    DISTI # 9034285P    		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, TU14
    • 15:£4.6500
    • 30:£4.4300
    • 100:£3.8400
    • 300:£3.6800
    HGTG18N120BND
    DISTI # 9034285    		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, EA58
    • 1:£5.1400
    • 15:£4.6500
    • 30:£4.4300
    • 100:£3.8400
    • 300:£3.6800
    HGTG18N120BNDFairchild Semiconductor CorporationINSTOCK62
      HGTG18N120BND
      DISTI # 1095111      		ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant      		9
      • 1:$9.7400
      • 10:$8.8000
      • 25:$8.3900
      • 100:$7.2800
      • 250:$6.9700
      HGTG18N120BND
      DISTI # 1095111      		ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant      		757
      • 1:£5.2700
      • 5:£4.7800
      • 10:£4.1300
      • 50:£3.8600
      • 100:£3.5800
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      HGTG10N120BND

      Mfr.#: HGTG10N120BND

      OMO.#: OMO-HGTG10N120BND

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      Mfr.#: RS1M

      OMO.#: OMO-RS1M

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      OMO.#: OMO-CFM-7010-13-10

      		 DC Fans DCFan 31.11CFM 3.24W 12V 70x70x10.6mm AR
      HGTG10N120BND

      Mfr.#: HGTG10N120BND

      OMO.#: OMO-HGTG10N120BND-ON-SEMICONDUCTOR

      		 IGBT 1200V 35A 298W TO247
      RS1M

      Mfr.#: RS1M

      OMO.#: OMO-RS1M-ON-SEMICONDUCTOR

      		 Rectifiers 1000V 1a Fast Rect SMa
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      Mfr.#: 06035C224KAT2A

      OMO.#: OMO-06035C224KAT2A-AVX

      		 Cap Ceramic 0.22uF 50V X7R 10% Pad SMD 0603 125C T/R
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      Mfr.#: AT24CM02-SSHD-B

      OMO.#: OMO-AT24CM02-SSHD-B-MICROCHIP-TECHNOLOGY

      		 IC EEPROM 2M I2C 1MHZ 8SOIC
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      Mfr.#: INA1650IPWR

      OMO.#: OMO-INA1650IPWR-TEXAS-INSTRUMENTS

      		 IC AUDIO RECEIVER 91DB 14TSSOP
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      Mfr.#: TAP475M035GSB

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      Disponibilidad
      Valores:
      663
      En orden:
      2646
      Ingrese la cantidad:
      El precio actual de HGTG18N120BND es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      6,21 US$
      6,21 US$
      10
      5,28 US$
      52,80 US$
      100
      4,57 US$
      457,00 US$
      250
      4,34 US$
      1 085,00 US$
      500
      3,89 US$
      1 945,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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