HGTG18N120BN

Mfr. #:: HGTG18N120BN
Fabricante:: ON Semiconductor / Fairchild
Descripción:: IGBT Transistors 54A 1200V N-Ch
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: HGTG18N120BN Ficha de datos
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HTML Datasheet:: HGTG18N120BN Datasheet HGTG18N120BN Datasheet (P4-P6)HGTG18N120BN Datasheet (P7-P8)
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Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: Transistores IGBT

RoHS:: E

Tecnología:: Si

Paquete / Caja:: TO-247-3

Estilo de montaje:: A través del orificio

Configuración:: Único

Voltaje colector-emisor VCEO Max:: 1200 V

Voltaje de saturación colector-emisor:: 2.45 V

Voltaje máximo del emisor de puerta:: 20 V

Corriente continua del colector a 25 C:: 54 A

Pd - Disipación de energía:: 390 W

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Serie:: HGTG18N120BN

Embalaje:: Tubo

Corriente continua de colector Ic Max:: 54 A

Altura:: 20.82 mm

Longitud:: 15.87 mm

Ancho:: 4.82 mm

Marca:: ON Semiconductor / Fairchild

Corriente continua del colector:: 54 A

Corriente de fuga puerta-emisor:: +/- 250 nA

Tipo de producto:: Transistores IGBT

Cantidad de paquete de fábrica:: 450

Subcategoría:: IGBT

Parte # Alias:: HGTG18N120BN_NL

Unidad de peso:: 0.225401 oz

Tags: HGTG18N120B, HGTG18, HGTG1, HGTG, HGT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step2:
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HGTG18N120BN Descripción

***ical: TransIGBTChipNCH1200V54A390000mW3Pin3TabTO247Rail

***ark: IGBT;TransistorTypeIGBT;TransistorPolarityNChannel;ContinuousCollectorCurrentIc54A;CollectorEmitterSaturationVoltageVcesat27V;PowerDissipationPd390W;PackageCaseTO247;RoHSCompliantYes

***rchildSemiconductor: HGTG18N120BNisbasedonNonPunchThroughNPTIGBTdesignsTheIGBTisidealformanyhighvoltageswitchingapplicationsoperatingatmoderatefrequencieswherelowconductionlossesareessentialsuchasUPSsolarinvertermotorcontrolandpowersupplies

Market price

Parte #	Mfg.	Descripción	Valores	Precio
HGTG18N120BN DISTI # 16558844	ON Semiconductor	54A&#44,1200V&#44,NPT SERIES	300	300:$1.6945
HGTG18N120BND DISTI # HGTG18N120BND-ND	ON Semiconductor	IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	884In Stock	2700:$2.3913 900:$2.9772 450:$3.3180 25:$4.0352 10:$4.2690 1:$4.7500
HGTG18N120BN DISTI # HGTG18N120BN-ND	ON Semiconductor	IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call	450:$2.9221
HGTG18N120BND DISTI # V36:1790_06358981	ON Semiconductor	NPTPIGBT TO247 54A 1200V	0	450000:$1.9270 225000:$1.9320 45000:$2.7410 4500:$4.4480 450:$4.7500
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 1266	150:$2.4900 300:$2.4900 30:$2.5900 60:$2.5900 90:$2.5900
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$1.9900 450:$2.0900 900:$2.0900 1800:$2.0900 2700:$2.0900
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 1	Europe - 0	100:€1.5900 500:€1.5900 1000:€1.5900 25:€1.6900 50:€1.6900 10:€1.7900 1:€1.8900
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 50 Container: Bulk	Americas - 0	500:$6.0900 250:$6.2900 150:$6.3900 50:$6.4900 100:$6.4900
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.6900 500:€1.7900 50:€1.8900 100:€1.8900 25:€1.9900 10:€2.0900 1:€2.2900
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
HGTG18N120BN DISTI # 83F5467	ON Semiconductor	SINGLE IGBT, 1.2KV, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.7V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0	500:$4.5000 250:$4.6400 100:$5.5400 50:$5.9600 25:$6.3700 10:$6.9900 1:$7.7900
HGTG18N120BND DISTI # 97K1398	ON Semiconductor	IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	382	500:$4.2400 250:$4.6100 100:$4.7900 50:$5.1100 25:$5.4300 10:$5.6700 1:$6.2100
HGTG18N120BN DISTI # 512-HGTG18N120BN	ON Semiconductor	IGBT Transistors 54A 1200V N-Ch RoHS: Compliant	0
HGTG18N120BND DISTI # 512-HGTG18N120BND	ON Semiconductor	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS: Compliant	665	1:$6.2100 10:$5.2800 100:$4.5700 250:$4.3400 500:$3.8900
HGTG18N120BN	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	737	1000:$2.4300 500:$2.5600 100:$2.6700 25:$2.7800 1:$3.0000
HGTG18N120BND DISTI # 9034285	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, EA	93	300:£3.6400 100:£3.8000 30:£4.3900 15:£4.6000 1:£5.0900
HGTG18N120BND DISTI # 9034285P	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, TU	732	300:£3.6400 100:£3.8000 30:£4.3900 15:£4.6000
HGTG18N120BND	Harris Semiconductor		38
HGTG18N120BN DISTI # HGTG18N120BN	ON Semiconductor	Transistor: IGBT,1.2kV,26A,390W,TO247-3	11	20:$5.2254 10:$5.9461 5:$6.9000 1:$7.6669
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Transistor: IGBT,1.2kV,26A,390W,TO247-3	46	30:$3.8900 10:$4.3200 3:$5.3900 1:$6.2500
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	391	500:$5.9800 250:$6.6800 100:$7.0300 10:$8.1200 1:$9.5500
HGTG18N120BND DISTI # XSKDRABS0025239	ON SEMICONDUCTOR	RoHS: Compliant	360 in Stock0 on Order	360:$2.8300 165:$3.0300
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247	2009	500:£3.0000 250:£3.3400 100:£3.5200 10:£4.0700 1:£5.2800

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN	IGBT Transistors 54A 1200V N-Ch
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120 OMO.#: OMO-HGTG18N120-1190	Nuevo y original
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN-ON-SEMICONDUCTOR	IGBT 1200V 54A 390W TO247
	Mfr.#: HGTG18N120BND,18N120BND OMO.#: OMO-HGTG18N120BND-18N120BND-1190	Nuevo y original
	Mfr.#: HGTG18N120BND,18N120BND, OMO.#: OMO-HGTG18N120BND-18N120BND--1190	Nuevo y original
	Mfr.#: HGTG18N120BND,18N120BND,18N120, OMO.#: OMO-HGTG18N120BND-18N120BND-18N120--1190	Nuevo y original
	Mfr.#: HGTG18N120BND-NL OMO.#: OMO-HGTG18N120BND-NL-1190	Nuevo y original
	Mfr.#: HGTG18N120BN G18N120BN OMO.#: OMO-HGTG18N120BN-G18N120BN-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 5500
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HGTG18N120BN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes