PartNumber | GB02SHT01-46 | GB02SHT03-46 | GB02SHT06-46 |
Description | Schottky Diodes & Rectifiers SiC Schottky Diode | Schottky Diodes & Rectifiers SiC Schottky Diode | Schottky Diodes & Rectifiers SiC Schottky Diode |
Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
RoHS | Y | Y | Y |
Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-46-2 | TO-46-2 | TO-46-2 |
If Forward Current | 4 A | 4 A | 4 A |
Vrrm Repetitive Reverse Voltage | 100 V | 300 V | 600 V |
Vf Forward Voltage | 1.6 V | 2.6 V | 1.6 V |
Ifsm Forward Surge Current | 10 A | 10 A | 10 A |
Configuration | Single | Single | Single |
Technology | SiC | SiC | SiC |
Ir Reverse Current | 1 uA | 5 uA | 1 uA |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 225 C | + 225 C | + 225 C |
Packaging | Bulk | Bulk | Bulk |
Operating Temperature Range | - 55 C to + 225 C | - | - 55 C to + 225 C |
Brand | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
Pd Power Dissipation | 64 W | 64 W | 64 W |
Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |