 |  | | |
| PartNumber | FQP8N60C | FQP8N60C,8N60 | FQP8N60C,8N60C, |
| Description | MOSFET 600V N-Ch Q-FET advance C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 147 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQP8N60C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 8.7 S | - | - |
| Fall Time | 64.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 60.5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 81 ns | - | - |
| Typical Turn On Delay Time | 16.5 ns | - | - |
| Part # Aliases | FQP8N60C_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP8N60C | MOSFET 600V N-Ch Q-FET advance C-Series | |
| FQP8N60C,8N60 | Nuevo y original | ||
| FQP8N60C,8N60C, | Nuevo y original | ||
| FQP8N60C_Q | MOSFET 600V N-Ch Q-FET advance C-Series | ||
ON Semiconductor |
FQP8N60C | IGBT Transistors MOSFET 600V N-Ch Q-FET advance C-Series |