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FQP8N60C

FQP8N60C
Mfr. #:
FQP8N60C
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V N-Ch Q-FET advance C-Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP8N60C Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
7.5 A
Rds On - Resistencia de la fuente de drenaje:
1.2 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
147 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP8N60C
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
8.7 S
Otoño:
64.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
60.5 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
81 ns
Tiempo típico de retardo de encendido:
16.5 ns
Parte # Alias:
FQP8N60C_NL
Unidad de peso:
0.063493 oz
Tags
FQP8N60C, FQP8N60, FQP8N6, FQP8N, FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail
***enic
600V 7.5A 147W 1.2´Î@10V3.75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.2ohm; Package / Case:TO-220; Power Dissipation Pd:147W; Power Dissipation Pd:147W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parte # Mfg. Descripción Valores Precio
FQP8N60C
DISTI # FQP8N60C-ND		ON SemiconductorMOSFET N-CH 600V 7.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 1000:$1.0170
  • 500:$1.2274
  • 100:$1.5781
  • 10:$1.9640
  • 1:$2.1700
FQP8N60C
DISTI # FQP8N60C		ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N60C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7599
  • 2000:$0.7559
  • 4000:$0.7459
  • 6000:$0.7359
  • 10000:$0.7179
FQP8N60C
DISTI # 97K0198		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:147W,MSL:- , RoHS Compliant: Yes0
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2500:$0.8610
  • 5000:$0.8290
FQP8N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		43736
  • 1000:$1.0600
  • 500:$1.1200
  • 100:$1.1600
  • 25:$1.2100
  • 1:$1.3000
FQP8N60C
DISTI # 512-FQP8N60C		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Compliant		926
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2000:$0.8610
  • 5000:$0.8290
  • 10000:$0.7970
FQP8N60C_Q
DISTI # 512-FQP8N60C_Q		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Not compliant		0
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		47
    • 5:£1.1600
    • 25:£1.0600
    • 100:£0.8100
    • 250:£0.7630
    • 500:£0.7160
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		52
    • 1:$1.5100
    FQP8N60C
    DISTI # XSFP00000021118    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		3365
    • 1000:$1.8700
    • 3365:$1.7000
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    Disponibilidad
    Valores:
    635
    En orden:
    2618
    Ingrese la cantidad:
    El precio actual de FQP8N60C es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,86 US$
    1,86 US$
    10
    1,58 US$
    15,80 US$
    100
    1,27 US$
    127,00 US$
    500
    1,10 US$
    550,00 US$
    1000
    0,92 US$
    920,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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