FQI27N25T stock, FQI27N25T, FQI27N25TU


PartNumber	FQI27N25TU	FQI27N25TU-F085
Description	MOSFET 250V N-Channel QFET	MOSFET 250V 0.11OHM 25.5A N-CH MOSFET
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET
RoHS	E	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-262-3	TO-262-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	250 V	250 V
Id Continuous Drain Current	25.5 A	25.5 A
Rds On Drain Source Resistance	110 mOhms	110 Ohms
Vgs Gate Source Voltage	30 V	-
Minimum Operating Temperature	- 55 C	-
Maximum Operating Temperature	+ 150 C	-
Pd Power Dissipation	3.13 W	-
Configuration	Single	Single
Channel Mode	Enhancement	-
Packaging	Tube	-
Height	7.88 mm	7.88 mm
Length	10.29 mm	10.29 mm
Series	FQI27N25	FQI27N25TU_F085
Transistor Type	1 N-Channel	1 N-Channel
Type	MOSFET	-
Width	4.83 mm	4.83 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Forward Transconductance Min	24 S	-
Fall Time	120 ns	-
Product Type	MOSFET	MOSFET
Rise Time	270 ns	-
Factory Pack Quantity	1000	400
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	80 ns	-
Typical Turn On Delay Time	32 ns	-
Part # Aliases	FQI27N25TU_NL	FQI27N25TU_F085
Unit Weight	0.073511 oz	0.073511 oz
Qualification	-	AEC-Q101
Tradename	-	UltraFET QFET

Search Part Number : "FQI27N25T", Match & Start with "FQI27N25T" - Total : 6

Fabricante	Parte #	Descripción
ON Semiconductor / Fairchild	FQI27N25TU	MOSFET 250V N-Channel QFET
ON Semiconductor / Fairchild	FQI27N25TU-F085	MOSFET 250V 0.11OHM 25.5A N-CH MOSFET
ON Semiconductor	FQI27N25TU	MOSFET N-CH 250V 25.5A I2PAK
ON Semiconductor	FQI27N25TU-F085	MOSFET N-CH 250V 25.5A I2PAK
	FQI27N25TU TO-262	Nuevo y original
	FQI27N25TU_F085	RF Bipolar Transistors MOSFET 250V 0.11OHM 25.5A N-CH MOSFET

FQI27N25T