PartNumber | FQI27N25TU | FQI27N25 | FQI27N25TU TO-262 |
Description | MOSFET 250V N-Channel QFET | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 250 V | - | - |
Id Continuous Drain Current | 25.5 A | - | - |
Rds On Drain Source Resistance | 110 mOhms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3.13 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 7.88 mm | - | - |
Length | 10.29 mm | - | - |
Series | FQI27N25 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | MOSFET | - | - |
Width | 4.83 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 24 S | - | - |
Fall Time | 120 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 270 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 80 ns | - | - |
Typical Turn On Delay Time | 32 ns | - | - |
Part # Aliases | FQI27N25TU_NL | - | - |
Unit Weight | 0.073511 oz | - | - |