FQI

FQI11N40TU vs FQI11P06TU vs FQI10N60CTU

 
PartNumberFQI11N40TUFQI11P06TUFQI10N60CTU
DescriptionMOSFET 400V N-Channel QFETMOSFET 60V P-Channel QFETMOSFET 600V N-Channel Adv Q-FET C-Series
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSEEE
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3TO-262-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelP-ChannelN-Channel
Vds Drain Source Breakdown Voltage400 V60 V600 V
Id Continuous Drain Current11.4 A11.4 A9.5 A
Rds On Drain Source Resistance480 mOhms175 mOhms730 mOhms
Vgs Gate Source Voltage30 V25 V30 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 175 C+ 150 C
Pd Power Dissipation3.13 W3.13 W3.13 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Height7.88 mm7.88 mm7.88 mm
Length10.29 mm10.29 mm10.29 mm
Transistor Type1 N-Channel1 P-Channel1 N-Channel
TypeMOSFETMOSFETMOSFET
Width4.83 mm4.83 mm4.83 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min7.6 S5.1 S8 S
Fall Time60 ns45 ns77 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time100 ns40 ns69 ns
Factory Pack Quantity50100050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time60 ns15 ns144 ns
Typical Turn On Delay Time30 ns6.5 ns23 ns
Unit Weight0.084199 oz0.084199 oz0.084199 oz
Part # Aliases--FQI10N60CTU_NL
  • Empezar con
  • FQI 218
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI13N50CTU MOSFET N-CH/500V/13A/QFET
FQI11N40TU MOSFET 400V N-Channel QFET
FQI13N06LTU MOSFET 60V N-Channel QFET Logic Level
FQI12N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series
FQI17N08LTU MOSFET 80V N-Channel QFET Logic Level
FQI16N25CTU MOSFET N-CH/250V/16A/QFET
FQI12N60TU MOSFET
FQI17P06TU MOSFET -60V Single
FQI11P06TU MOSFET 60V P-Channel QFET
FQI15P12TU MOSFET P-CH/120V/15A/QFET
FQI10N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series
FQI10N20 Nuevo y original
FQI10N20C Nuevo y original
FQI10N20L Nuevo y original
FQI10N20LTU Nuevo y original
FQI10N60C Nuevo y original
FQI11N40 Nuevo y original
FQI11P06 Nuevo y original
FQI12N20 Nuevo y original
FQI12N50 Nuevo y original
FQI12N60C Nuevo y original
FQI12P10 Nuevo y original
FQI12P20TU Nuevo y original
FQI13N06 Nuevo y original
FQI13N06L Nuevo y original
FQI13N06TUFSC Nuevo y original
FQI13N10L Nuevo y original
FQI13N50 Nuevo y original
FQI13N50C Nuevo y original
FQI14N30 Nuevo y original
FQI16N25C Nuevo y original
FQI17N08L Nuevo y original
FQI17N08TUFSC Nuevo y original
FQI17P06 Nuevo y original
FQI17P10TU Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
ON Semiconductor
ON Semiconductor
FQI10N20CTU MOSFET N-CH 200V 9.5A I2PAK
FQI10N60CTU MOSFET N-CH 600V 9.5A I2PAK
FQI11N40TU MOSFET N-CH 400V 11.4A I2PAK
FQI11P06TU MOSFET P-CH 60V 11.4A I2PAK
FQI12N60CTU MOSFET N-CH 600V 12A I2PAK
FQI12N60TU MOSFET N-CH 600V 10.5A I2PAK
FQI13N06LTU MOSFET N-CH 60V 13.6A I2PAK
FQI13N06TU MOSFET N-CH 60V 13A I2PAK
FQI13N50CTU MOSFET N-CH 500V 13A I2PAK
FQI15P12TU MOSFET P-CH 120V 15A I2PAK
FQI16N25CTU MOSFET N-CH 250V 15.6A I2PAK
FQI17N08LTU MOSFET N-CH 80V 16.5A I2PAK
FQI17N08TU MOSFET N-CH 80V 16.5A I2PAK
FQI17P06TU MOSFET P-CH 60V 17A I2PAK
FQI12N50TU MOSFET N-CH 500V 12.1A I2PAK
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