 |  | | |
| PartNumber | FQI17N08LTU | FQI17N08L | FQI17N08TUFSC |
| Description | MOSFET 80V N-Channel QFET Logic Level | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 16.5 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.75 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 7.88 mm | - | - |
| Length | 10.29 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 75 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 290 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQI17N08LTU | MOSFET 80V N-Channel QFET Logic Level | |
| FQI17P06TU | MOSFET -60V Single | ||
| FQI17N08L | Nuevo y original | ||
| FQI17N08TUFSC | Nuevo y original | ||
| FQI17P06 | Nuevo y original | ||
ON Semiconductor |
FQI17N08LTU | MOSFET N-CH 80V 16.5A I2PAK | |
| FQI17N08TU | MOSFET N-CH 80V 16.5A I2PAK | ||
| FQI17P06TU | MOSFET P-CH 60V 17A I2PAK | ||
| FQI17P10TU | Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |