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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FQI17P10TU DISTI # 512-FQI17P10TU | ON Semiconductor | MOSFET RoHS: Not compliant | 0 | |
| FQI17P10TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 1000 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: FQI17N08LTU OMO.#: OMO-FQI17N08LTU |
MOSFET 80V N-Channel QFET Logic Level |
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Mfr.#: FQI17P06TU OMO.#: OMO-FQI17P06TU |
MOSFET -60V Single |
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Mfr.#: FQI17N08L OMO.#: OMO-FQI17N08L-1190 |
Nuevo y original |
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Mfr.#: FQI17N08LTU |
MOSFET N-CH 80V 16.5A I2PAK |
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Mfr.#: FQI17N08TU |
MOSFET N-CH 80V 16.5A I2PAK |
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Mfr.#: FQI17N08TUFSC OMO.#: OMO-FQI17N08TUFSC-1190 |
Nuevo y original |
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Mfr.#: FQI17P06 OMO.#: OMO-FQI17P06-1190 |
Nuevo y original |
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Mfr.#: FQI17P06TU |
MOSFET P-CH 60V 17A I2PAK |
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Mfr.#: FQI17P10TU OMO.#: OMO-FQI17P10TU-1190 |
Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
