FQI

FQI9N15TU vs FQI9N25 vs FQI9N25C

 
PartNumberFQI9N15TUFQI9N25FQI9N25C
DescriptionMOSFET 150V Single
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time5.5 ns--
Unit Weight0.084199 oz--
  • Empezar con
  • FQI 218
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI9N50CTU MOSFET 500V N-Channel Adv Q-FET C-Series
FQI9N50TU MOSFET 500V N-Channel QFET
FQI9N15TU MOSFET 150V Single
FQI9N25 Nuevo y original
FQI9N25C Nuevo y original
FQI9N30 Nuevo y original
FQI9N30TU Nuevo y original
FQI9N50 Nuevo y original
FQI9N50C Nuevo y original
FQIIN50B Nuevo y original
ON Semiconductor
ON Semiconductor
FQI9N25CTU MOSFET N-CH 250V 8.8A I2PAK
FQI9N50CTU MOSFET N-CH 500V 9A I2PAK
FQI9N50TU MOSFET N-CH 500V 9A I2PAK
FQI9N15TU MOSFET N-CH 150V 9A I2PAK
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