 |  | |
| PartNumber | FQB34P10TM-F085 | FQB34P10TM-F085P |
| Description | MOSFET -33.5A,-100V, P-ch | MOSFET -33.5A,-100V, P-ch MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | D2PAK-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 33.5 A | 33.5 A |
| Rds On Drain Source Resistance | 60 mOhms | 49 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 3.75 W | 155 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | QFET | - |
| Packaging | Reel | Reel |
| Height | 4.83 mm | - |
| Length | 10.67 mm | - |
| Series | FQB34P10TM_F085 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 9.65 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 210 ns | 210 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 250 ns | 250 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 160 ns | 160 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns |
| Part # Aliases | FQB34P10TM_F085 | FQB34P10TM_F085P |
| Unit Weight | 0.046296 oz | 0.051500 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Qg Gate Charge | - | 85 nC |
| Forward Transconductance Min | - | 23 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB34P10TM-F085 | MOSFET -33.5A,-100V, P-ch | |
| FQB34P10TM-F085P | MOSFET -33.5A,-100V, P-ch MOSFET | ||
ON Semiconductor |
FQB34P10TM-F085P | PMOS D2PAK 100V 60 MOHM | |
| FQB34P10TM-F085 | MOSFET P-CH 100V 33.5A D2PAK |