 | | | |
| PartNumber | FQB34P10TM | FQB34N20TM-AM002 | FQB34P10TM-F085 |
| Description | MOSFET 100V P-Channel QFET | MOSFET 200V N-Channel QFET | MOSFET -33.5A,-100V, P-ch |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 200 V | 100 V |
| Id Continuous Drain Current | 33.5 A | 31 A | 33.5 A |
| Rds On Drain Source Resistance | 60 mOhms | 57 mOhms | 60 mOhms |
| Vgs Gate Source Voltage | 25 V | 30 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
| Pd Power Dissipation | 3.75 W | 3.13 W | 3.75 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQB34P10 | FQB34N20 | FQB34P10TM_F085 |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 P-Channel |
| Type | QFET | MOSFET | - |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 23 S | - | - |
| Fall Time | 210 ns | 115 ns | 210 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 250 ns | 280 ns | 250 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 160 ns | 125 ns | 160 ns |
| Typical Turn On Delay Time | 25 ns | 40 ns | 25 ns |
| Part # Aliases | FQB34P10TM_NL | FQB34N20TM_AM002 | FQB34P10TM_F085 |
| Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
| Tradename | - | - | QFET |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB34P10TM | MOSFET 100V P-Channel QFET | |
| FQB34N20TM-AM002 | MOSFET 200V N-Channel QFET | ||
| FQB34P10TM-F085 | MOSFET -33.5A,-100V, P-ch | ||
| FQB34P10TM-F085P | MOSFET -33.5A,-100V, P-ch MOSFET | ||
| FQB34N20 | Nuevo y original | ||
| FQB34N20 34N20 FAIRCHIL | Nuevo y original | ||
| FQB34N20L | Nuevo y original | ||
| FQB34N20LTM-NL | Nuevo y original | ||
| FQB34N20TM | Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB34N20TM AM002 | Nuevo y original | ||
| FQB34N20TM-NL | Nuevo y original | ||
| FQB34P10 | Nuevo y original | ||
| FQB34P10TM-NL | Nuevo y original | ||
| FQB34P10TM/BKN | Nuevo y original | ||
| FQB34P10TM_F085 | -33.5A,-100V, P-CH MOSFET | ||
| FQB34N20TM_AM002 | Darlington Transistors MOSFET 200V N-Channel QFET | ||
| FQB34N20LTM-CUT TAPE | Nuevo y original | ||
| FQB34P10TM-CUT TAPE | Nuevo y original | ||
ON Semiconductor |
FQB34N20TM-AM002 | MOSFET N-CH 200V 31A D2PAK | |
| FQB34P10TM | MOSFET P-CH 100V 33.5A D2PAK | ||
| FQB34P10TM-F085P | PMOS D2PAK 100V 60 MOHM | ||
| FQB34N20LTM | MOSFET N-CH 200V 31A D2PAK | ||
| FQB34P10TM-F085 | MOSFET P-CH 100V 33.5A D2PAK |