PartNumber | FQB34P10TM | FQB34P10TM-F085 | FQB34P10TM-F085P |
Description | MOSFET 100V P-Channel QFET | MOSFET -33.5A,-100V, P-ch | MOSFET -33.5A,-100V, P-ch MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | D2PAK-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 33.5 A | 33.5 A | 33.5 A |
Rds On Drain Source Resistance | 60 mOhms | 60 mOhms | 49 mOhms |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 3.75 W | 3.75 W | 155 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | - |
Length | 10.67 mm | 10.67 mm | - |
Series | FQB34P10 | FQB34P10TM_F085 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Type | QFET | - | - |
Width | 9.65 mm | 9.65 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 23 S | - | 23 S |
Fall Time | 210 ns | 210 ns | 210 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 250 ns | 250 ns | 250 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 160 ns | 160 ns | 160 ns |
Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
Part # Aliases | FQB34P10TM_NL | FQB34P10TM_F085 | FQB34P10TM_F085P |
Unit Weight | 0.046296 oz | 0.046296 oz | 0.051500 oz |
Tradename | - | QFET | - |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Qg Gate Charge | - | - | 85 nC |