 |  | |
| PartNumber | FDD850N10L | FDD850N10LD |
| Description | MOSFET 100V N-Channel PowerTrench MOSFET | MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-5 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 15.7 A | 15.7 A |
| Rds On Drain Source Resistance | 64 mOhms | 75 mOhms |
| Qg Gate Charge | 22.2 nC | 22.2 nC |
| Maximum Operating Temperature | + 175 C | + 150 C |
| Pd Power Dissipation | 50 W | 42 W |
| Configuration | Single | Single |
| Tradename | PowerTrench | PowerTrench |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FDD850N10L | FDD850N10LD |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 31 S | 31 S |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.009184 oz | 0.009184 oz |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Channel Mode | - | Enhancement |
| Fall Time | - | 8 ns |
| Rise Time | - | 21 ns |
| Typical Turn Off Delay Time | - | 27 ns |
| Typical Turn On Delay Time | - | 17 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD850N10L | MOSFET 100V N-Channel PowerTrench MOSFET | |
| FDD850N10LD | MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak | ||
ON Semiconductor |
FDD850N10LD | MOSFET N-CH 100V 15.3A DPAK | |
| FDD850N10L | MOSFET N-CH 100V 15.7A DPAK-3 | ||
| FDD8505 | Electronic Component |