FDD85

FDD850N10L vs FDD850N10LD vs FDD8580

 
PartNumberFDD850N10LFDD850N10LDFDD8580
DescriptionMOSFET 100V N-Channel PowerTrench MOSFETMOSFET 100V, 15.7A, 75mOhm N-Channel BoostPakMOSFET 20V 35A 9 OHM NCH POWER TRENC
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-5TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V20 V
Id Continuous Drain Current15.7 A15.7 A35 A
Rds On Drain Source Resistance64 mOhms75 mOhms6.6 mOhms
Qg Gate Charge22.2 nC22.2 nC-
Maximum Operating Temperature+ 175 C+ 150 C+ 175 C
Pd Power Dissipation50 W42 W49.5 W
ConfigurationSingleSingleSingle
TradenamePowerTrenchPowerTrench-
PackagingReelReelReel
Height2.39 mm2.39 mm2.39 mm
Length6.73 mm6.73 mm6.73 mm
SeriesFDD850N10LFDD850N10LD-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm6.22 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min31 S31 S61 S
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.009184 oz0.009184 oz0.000557 oz
Vgs Gate Source Voltage-20 V20 V
Minimum Operating Temperature-- 55 C- 55 C
Channel Mode-EnhancementEnhancement
Fall Time-8 ns34 ns
Rise Time-21 ns11 ns
Typical Turn Off Delay Time-27 ns59 ns
Typical Turn On Delay Time-17 ns7 ns
Type--MOSFET
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD850N10L MOSFET 100V N-Channel PowerTrench MOSFET
FDD850N10LD MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak
FDD8580 MOSFET 20V 35A 9 OHM NCH POWER TRENC
FDD8586 MOSFET 20V 35A 5.5 OHM NCH DPAK PO
ON Semiconductor
ON Semiconductor
FDD850N10LD MOSFET N-CH 100V 15.3A DPAK
FDD850N10L MOSFET N-CH 100V 15.7A DPAK-3
FDD8580 MOSFET N-CH 20V 35A DPAK
FDD8586 MOSFET N-CH 20V 35A DPAK
FDD8505 Electronic Component
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