PartNumber | DMS3014SFGQ-7 | DMS3014SFGQ-13 | DMS3015SSS-13 |
Description | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET N-CHAN |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerDI3333-8 | PowerDI3333-8 | SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 9.5 A | 9.5 A | 11 A |
Rds On Drain Source Resistance | 9 mOhms | 9 mOhms | 8.5 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
Qg Gate Charge | 45.7 nC | 45.7 nC | 30.6 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.1 W | 2.1 W | 1.55 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 6.6 ns | 6.6 ns | 13.6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24.4 ns | 24.4 ns | 27.8 ns |
Factory Pack Quantity | 2000 | 3000 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33.1 ns | 33.1 ns | 29.7 ns |
Typical Turn On Delay Time | 5.5 ns | 5.5 ns | 15.8 ns |
RoHS | - | - | Y |
Tradename | - | - | DIOFET |
Packaging | - | - | Reel |
Product | - | - | MOSFET Small Signal |
Series | - | - | DMS30 |
Forward Transconductance Min | - | - | 18 S |
Unit Weight | - | - | 0.002610 oz |