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| PartNumber | DMG6602SVTQ-7 | DMG6602SVT-7 | DMG6601LVT-7 |
| Description | MOSFET 30V Vds 20V Vgs Complmtry Enh FET | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | MOSFET 30V Comp ENH Mode 25 to 30V MosFET |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 3.4 A, 2.8 A | 3.4 A, 2.8 A | 3.8 A, 2.5 A |
| Rds On Drain Source Resistance | 100 mOhms, 140 mOhms | 100 mOhms, 140 mOhms | 55 mOhms, 110 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V, 2.3 V | - | 500 mV, 400 mV |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 9 nC, 7 nC | 9 nC | 12.3 nC, 13.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.27 W | 840 mW | 1.3 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Series | DMG6602 | DMG6602 | DMG6601 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 4 S, 6 S | 4 S | - |
| Fall Time | 3 ns, 13 ns | 3 ns | 15.6 ns, 2.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns, 7.3 ns | 5 ns | 7.4 ns, 4.6 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns, 20 ns | 13 ns | 31.2 ns, 18.3 ns |
| Typical Turn On Delay Time | 3 ns, 4.8 ns | 3 ns | 1.6 ns, 1.7 ns |
| Transistor Type | - | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Unit Weight | - | - | 0.000459 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG6602SVTX-7 | MOSFET MOSFET BVDSS: 25V-30V | |
| DMG6602SVTQ-7 | MOSFET 30V Vds 20V Vgs Complmtry Enh FET | ||
| DMG6602SVT-7 | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | ||
| DMG6601LVT-7 | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | ||
| DMG6602SVT-7 | Nuevo y original | ||
| DMG6602SVTX-7 | MOSFET BVDSS: 25V-30V TSOT26 T&R | ||
| DMG6602SVTQ-7 | IGBT Transistors MOSFET 30V Vds 20V Vgs Complmtry Enh FET | ||
| DMG6601LVT-7 | MOSFET N/P-CH 30V 26TSOT | ||
| DMG6601LVT-7-F | Nuevo y original | ||
| DMG6602SVT-7,2SK1764KYTR | Nuevo y original | ||
| DMG6602SVT-7-F | Nuevo y original | ||
| DMG6602SVT-7-TW | Nuevo y original | ||
| DMG6602SVTX | Nuevo y original | ||
| DMG6601LVT-7-01 | Nuevo y original | ||
| DMG6601LVT-7-CUT TAPE | Nuevo y original | ||
| DMG6602SVT-7-CUT TAPE | Nuevo y original | ||
| DMG6602SVT | MOSFET, NP CHANNEL, COM PAIR, 30V, TSOT23, Transistor Polarity:N and P Channel, Continuous Drain Current Id:3.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.038ohm, Rds(on) Test Voltag |