 |  | | |
| PartNumber | DMG4435SSS-13 | DMG4435SSS-13-89 | DMG4435SSS-13-CUT TAPE |
| Description | MOSFET MOSFET,P-CHANNEL | ||
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 35.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG4435 | - | - |
| Transistor Type | P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 22 S | - | - |
| Fall Time | 22.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12.7 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 44.9 ns | - | - |
| Typical Turn On Delay Time | 8.6 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG4435SSS-13 | MOSFET MOSFET,P-CHANNEL | |
| DMG4435SSS-13-89 | Nuevo y original | ||
| DMG4435SSS-13-F | Nuevo y original | ||
| DMG4435SSS-13-CUT TAPE | Nuevo y original | ||
| DMG4435SSS-13 | Darlington Transistors MOSFET MOSFET,P-CHANNEL |