DMG4435SS

DMG4435SSS-13 vs DMG4435SS-13 vs DMG4435SSS

 
PartNumberDMG4435SSS-13DMG4435SS-13DMG4435SSS
DescriptionMOSFET MOSFET,P-CHANNEL
ManufacturerDiodes IncorporatedDIODESDIODES
Product CategoryMOSFETIC ChipsFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7.5 A--
Rds On Drain Source Resistance20 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge35.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR Alternate Packaging
ProductMOSFET Small Signal--
SeriesDMG4435--
Transistor TypeP-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min22 S--
Fall Time22.8 ns--
Product TypeMOSFET--
Rise Time12.7 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44.9 ns--
Typical Turn On Delay Time8.6 ns--
Unit Weight0.002610 oz--
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SOP
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--2.5W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--1614pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--7.3A (Ta)
Rds On Max Id Vgs--16 mOhm @ 11A, 20V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--35.4nC @ 10V
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
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