BSM35GD120DN

BSM35GD120DN2E3224 vs BSM35GD120DN2 vs BSM35GD120DN2E3224BOSA1

 
PartNumberBSM35GD120DN2E3224BSM35GD120DN2BSM35GD120DN2E3224BOSA1
DescriptionIGBT Modules N-CH 1.2KV 50AIGBT Modules 1200V 35A 3-PHASEIGBT 2 LOW POWER ECONO2-2
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSNN-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationHexHex-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.7 V2.7 V-
Continuous Collector Current at 25 C50 A50 A-
Gate Emitter Leakage Current150 nA150 nA-
Pd Power Dissipation280 W280 W-
Package / CaseEconoPACK 2EconoPACK 2-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTray--
Height17 mm17 mm-
Length107.5 mm107.5 mm-
Width45 mm45.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesBSM35GD120DN2E3224BOSA1 SP000091898BSM35GD120DN2BOSA1 SP000100371-
Unit Weight6.490409 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSM35GD120DN2E3224 IGBT Modules N-CH 1.2KV 50A
BSM35GD120DN2E3224BOSA1 IGBT 2 LOW POWER ECONO2-2
BSM35GD120DN2 IGBT Modules 1200V 35A 3-PHASE
Infineon Technologies
Infineon Technologies
BSM35GD120DN2 IGBT Modules 1200V 35A 3-PHASE
BSM35GD120DN2BOSA1 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
BSM35GD120DN2 E3224 Nuevo y original
BSM35GD120DN2(DLC) Nuevo y original
BSM35GD120DN2E Nuevo y original
BSM35GD120DN2E 3224 Nuevo y original
BSM35GD120DN2E3224(6) Nuevo y original
BSM35GD120DN2E3226 Nuevo y original
BSM35GD120DN2_E3226 Nuevo y original
BSM35GD120DN2_E3256 Nuevo y original
BSM35GD120DN2E3224 IGBT Modules N-CH 1.2KV 50A
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