BSM35GD120DN2E3224

BSM35GD120DN2E3224
Mfr. #:
BSM35GD120DN2E3224
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules N-CH 1.2KV 50A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM35GD120DN2E3224 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
N
Producto:
Módulos de silicio IGBT
Configuración:
Hex
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.7 V
Corriente continua del colector a 25 C:
50 A
Corriente de fuga puerta-emisor:
150 nA
Pd - Disipación de energía:
280 W
Paquete / Caja:
EconoPACK 2
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Altura:
17 mm
Longitud:
107.5 mm
Ancho:
45 mm
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Parte # Alias:
BSM35GD120DN2E3224BOSA1 SP000091898
Unidad de peso:
6.490409 oz
Tags
BSM35GD120DN2E3224, BSM35GD120DN2E3, BSM35GD120DN2E, BSM35GD120DN, BSM35GD120D, BSM35GD, BSM35, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V 35A 3-PHASE
***omponent
IGBT Power Module, 1200V 50A ECONOPACK 2K C67070-A2506-A67. Maximum Ratings. Parameter Symbol Values Unit. Collector-emitter voltage VCE 1200 V. Collector-gate voltage. RGE = 20 kO. VCGR. 1200
Parte # Mfg. Descripción Valores Precio
BSM35GD120DN2E3224BOSA1
DISTI # BSM35GD120DN2E3224BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$104.7230
BSM35GD120DN2E3224
DISTI # SP000091898
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000091898)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 8
  • 1:€104.7900
  • 10:€96.0900
  • 25:€92.1900
  • 50:€88.6900
  • 100:€85.3900
  • 500:€82.2900
  • 1000:€76.7900
BSM35GD120DN2E3224
DISTI # BSM35GD120DN2E3224
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: BSM35GD120DN2E3224)
RoHS: Compliant
Min Qty: 10
Container: Tape and Reel
Asia - 0
  • 10:$96.9257
  • 20:$94.2333
  • 30:$91.6865
  • 50:$89.2737
  • 100:$88.1143
  • 250:$86.9846
  • 500:$85.8835
BSM35GD120DN2E3224BOSA1
DISTI # BSM35GD120DN2E3224BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM35GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$97.6900
  • 20:$94.1900
  • 40:$90.7900
  • 60:$87.6900
  • 100:$86.1900
BSM35GD120DN2E3224
DISTI # 641-BSM35GD120DN2E32
Infineon Technologies AGIGBT Modules N-CH 1.2KV 50A
RoHS: Not compliant
24
  • 1:$108.5600
  • 5:$106.5700
  • 10:$101.7700
BSM35GD120DN2E3224Infineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant
Europe - 20
    BSM35GD120DN2E3224BOSA1
    DISTI # XSKDRABV0032779
    Infineon Technologies AG 
    RoHS: Compliant
    10
    • 10:$132.3600
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    Mfr.#: V14H550P

    OMO.#: OMO-V14H550P

    Varistors 550V 6500A 180pF 14mm Radial
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    OMO.#: OMO-OPA544T-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps Hi-Vltg Hi-Current Op Amp
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    Mfr.#: LT1013DIDR

    OMO.#: OMO-LT1013DIDR-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps Dual Prec Op Amp
    CRGH1206F10R

    Mfr.#: CRGH1206F10R

    OMO.#: OMO-CRGH1206F10R-TE-CONNECTIVITY-AMP

    Thick Film Resistors - SMD CRGH1206 1% 10R 0.5W
    TWW5J30RE

    Mfr.#: TWW5J30RE

    OMO.#: OMO-TWW5J30RE-OHMITE

    Wirewound Resistors - Through Hole 5watt 30ohm 5% Vertical Mount
    ULQ2003ADR

    Mfr.#: ULQ2003ADR

    OMO.#: OMO-ULQ2003ADR-TEXAS-INSTRUMENTS

    Darlington Transistors Darlington
    Disponibilidad
    Valores:
    21
    En orden:
    2004
    Ingrese la cantidad:
    El precio actual de BSM35GD120DN2E3224 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    108,55 US$
    108,55 US$
    5
    106,56 US$
    532,80 US$
    10
    101,76 US$
    1 017,60 US$
    25
    98,37 US$
    2 459,25 US$
    100
    91,60 US$
    9 160,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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