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BSM35GD120DN2E3224

BSM35GD120DN2E3224
Mfr. #:
BSM35GD120DN2E3224
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules N-CH 1.2KV 50A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM35GD120DN2E3224 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
EUPEC
categoria de producto
Módulo
Producto
Módulos de silicio IGBT
embalaje
A granel
Estilo de montaje
Tornillo
Configuración
Hex
Paquete-Estuche
EconoPACK 2
Disipación de potencia Pd
280 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Colector-Emisor-Voltaje-VCEO-Max
1200 V
Colector-Emisor-Saturación-Voltaje
2.7 V
Corriente-de-colector-continuo-a-25-C
50 A
Puerta-Emisor-Fuga-Corriente
150 nA
Voltaje máximo del emisor de puerta
+/- 20 V
Tags
BSM35GD120DN2E3224, BSM35GD120DN2E3, BSM35GD120DN2E, BSM35GD120DN, BSM35GD120D, BSM35GD, BSM35, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V 35A 3-PHASE
***omponent
IGBT Power Module, 1200V 50A ECONOPACK 2K C67070-A2506-A67. Maximum Ratings. Parameter Symbol Values Unit. Collector-emitter voltage VCE 1200 V. Collector-gate voltage. RGE = 20 kO. VCGR. 1200
Parte # Mfg. Descripción Valores Precio
BSM35GD120DN2E3224BOSA1
DISTI # BSM35GD120DN2E3224BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$104.7230
BSM35GD120DN2E3224
DISTI # SP000091898		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000091898)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 8
  • 1:€104.7900
  • 10:€96.0900
  • 25:€92.1900
  • 50:€88.6900
  • 100:€85.3900
  • 500:€82.2900
  • 1000:€76.7900
BSM35GD120DN2E3224
DISTI # BSM35GD120DN2E3224		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: BSM35GD120DN2E3224)
RoHS: Compliant
Min Qty: 10
Container: Tape and Reel		Asia - 0
  • 10:$96.9257
  • 20:$94.2333
  • 30:$91.6865
  • 50:$89.2737
  • 100:$88.1143
  • 250:$86.9846
  • 500:$85.8835
BSM35GD120DN2E3224BOSA1
DISTI # BSM35GD120DN2E3224BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM35GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$97.6900
  • 20:$94.1900
  • 40:$90.7900
  • 60:$87.6900
  • 100:$86.1900
BSM35GD120DN2E3224
DISTI # 641-BSM35GD120DN2E32		Infineon Technologies AGIGBT Modules N-CH 1.2KV 50A
RoHS: Not compliant		24
  • 1:$108.5600
  • 5:$106.5700
  • 10:$101.7700
BSM35GD120DN2E3224Infineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		Europe - 20
    BSM35GD120DN2E3224BOSA1
    DISTI # XSKDRABV0032779    		Infineon Technologies AG 
    RoHS: Compliant    		10
    • 10:$132.3600
    Imagen Parte # Descripción
    BSM35GD120DLCE3224

    Mfr.#: BSM35GD120DLCE3224

    OMO.#: OMO-BSM35GD120DLCE3224

    		 IGBT Modules N-CH 1.2KV 70A
    BSM35GD120DN2

    Mfr.#: BSM35GD120DN2

    OMO.#: OMO-BSM35GD120DN2

    		 IGBT Modules 1200V 35A 3-PHASE
    BSM35GD120DN2BOSA1

    Mfr.#: BSM35GD120DN2BOSA1

    OMO.#: OMO-BSM35GD120DN2BOSA1-1190

    		 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
    BSM35GD120DLC_E3224

    Mfr.#: BSM35GD120DLC_E3224

    OMO.#: OMO-BSM35GD120DLC-E3224-1190

    		 Nuevo y original
    BSM35GD120DN2 E3224

    Mfr.#: BSM35GD120DN2 E3224

    OMO.#: OMO-BSM35GD120DN2-E3224-1190

    		 Nuevo y original
    BSM35GD120DN2E

    Mfr.#: BSM35GD120DN2E

    OMO.#: OMO-BSM35GD120DN2E-1190

    		 Nuevo y original
    BSM35GD120DN2E3224(6)

    Mfr.#: BSM35GD120DN2E3224(6)

    OMO.#: OMO-BSM35GD120DN2E3224-6--1190

    		 Nuevo y original
    BSM35GD120DN2_E3226

    Mfr.#: BSM35GD120DN2_E3226

    OMO.#: OMO-BSM35GD120DN2-E3226-1190

    		 Nuevo y original
    BSM35GD120DN2_E3256

    Mfr.#: BSM35GD120DN2_E3256

    OMO.#: OMO-BSM35GD120DN2-E3256-1190

    		 Nuevo y original
    BSM35GD120DN2

    Mfr.#: BSM35GD120DN2

    OMO.#: OMO-BSM35GD120DN2-INFINEON-TECHNOLOGIES

    		 IGBT Modules 1200V 35A 3-PHASE
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de BSM35GD120DN2E3224 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    130,89 US$
    130,89 US$
    10
    124,35 US$
    1 243,47 US$
    100
    117,80 US$
    11 780,28 US$
    500
    111,26 US$
    55 629,10 US$
    1000
    104,71 US$
    104 713,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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