BSC100N10NSF

BSC100N10NSF G vs BSC100N10NSFG vs BSC100N10NSFGATMA1

 
PartNumberBSC100N10NSF GBSC100N10NSFGBSC100N10NSFGATMA1
DescriptionMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2100V,90A,N Channel Power MOSFETMOSFET N-CH 100V 90A TDSON-8
ManufacturerInfineon-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance10 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge44 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation156 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
TypeOptiMOS 2 Power-Transistor--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min61 S, 31 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time23 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesBSC100N10NSFGATMA1 BSC1N1NSFGXT SP000379595--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSC100N10NSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC100N10NSFGATMA1 MOSFET N-CH 100V 90A TDSON-8
BSC100N10NSFGXT Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
BSC100N10NSFG 100V,90A,N Channel Power MOSFET
BSC100N10NSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
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