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Parte # | Mfg. | Descripción | Valores | Precio |
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BSC100N10NSFGATMA1 DISTI # V72:2272_06378310 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 3938 |
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BSC100N10NSFGATMA1 DISTI # BSC100N10NSFGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 68In Stock |
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BSC100N10NSFGATMA1 DISTI # BSC100N10NSFGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 68In Stock |
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BSC100N10NSFGATMA1 DISTI # BSC100N10NSFGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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BSC100N10NSFGATMA1 DISTI # 26194995 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 3938 |
|
BSC100N10NSFGXT DISTI # BSC100N10NSFGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 15000 |
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BSC100N10NSF G DISTI # SP000379595 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000379595) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
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BSC100N10NSFGATMA1 DISTI # SP000379595 | Infineon Technologies AG | Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000379595) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
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BSC100N10NSFGATMA1 | Infineon Technologies AG | Single N-Channel 100 V 10 mOhm 44 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 5000Reel |
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BSC100N10NSFGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1514 |
|
BSC100N10NSF G DISTI # 726-BSC100N10NSFG | Infineon Technologies AG | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 RoHS: Compliant | 164 |
|
BSC100N10NSFGATMA1 DISTI # 9064375P | Infineon Technologies AG | MOSFET N-CH 100V 11.4A OPTIMOS TDSON8, RL | 95 |
|
BSC100N10NSFG | Infineon Technologies AG | INSTOCK | 3392 | |
BSC100N10NSFGATMA1 DISTI # XSFP00000093429 | Infineon Technologies AG | SmallSignalField-EffectTransistor,0.2AI(D),50V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 6730 |
|
BSC100N10NSFG | Infineon Technologies AG | 100V,90A,N Channel Power MOSFET | 3800 |
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BSC100N10NSFGATMA1 DISTI # C1S322000598902 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 3938 |
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Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G |
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC100N10NSF G OMO.#: OMO-BSC100N10NSF-G |
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | |
Mfr.#: BSC100N10NSFGXT OMO.#: OMO-BSC100N10NSFGXT-1190 |
Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1) | |
Mfr.#: BSC100N03LS OMO.#: OMO-BSC100N03LS-1190 |
Nuevo y original | |
Mfr.#: BSC100N03LS G OMO.#: OMO-BSC100N03LS-G-1190 |
MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th | |
Mfr.#: BSC100N03LSG,100N03LS, |
Nuevo y original | |
Mfr.#: BSC100N06LS OMO.#: OMO-BSC100N06LS-1190 |
Nuevo y original | |
Mfr.#: BSC100N06LS3GXT OMO.#: OMO-BSC100N06LS3GXT-1190 |
Nuevo y original | |
Mfr.#: BSC100N10NSFG OMO.#: OMO-BSC100N10NSFG-1190 |
100V,90A,N Channel Power MOSFET | |
Mfr.#: BSC100N03MSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |