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BSC100N10NSFGATMA1

BSC100N10NSFGATMA1
Mfr. #:
BSC100N10NSFGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 100V 90A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC100N10NSFGATMA1 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSC100N10NSF, BSC100N1, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 10 mOhm 44 nC OptiMOS™ Power Mosfet - TDSON-8
***ow.cn
BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
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***ark
TAPE REEL/PT5 100V/20V Nch Dual Cool PowerTrench MOSFET.
***nell
MOSFET, N-CH, 100V, 60A, DUAL COOL 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
***roFlash
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***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***ure Electronics
Single N-Channel 100 V 7.9 mOhm 66 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 13.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:100A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
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***ure Electronics
FDMS86101 Series 100 V 60 A 8 mOhm N-Channel PowerTrench® MOSFET - POWER-56
***roFlash
Power Field-Effect Transistor, 12.4A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ment14 APAC
MOSFET,N CH,100V,12.4A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011)
***emi
Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ
*** Source Electronics
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*** Stop Electro
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ure Electronics
Single N-Channel 100 V 11.8 mOhm 42 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:71A; On Resistance Rds(On):0.0118Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descripción Valores Precio
BSC100N10NSFGATMA1
DISTI # V72:2272_06378310		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		3738
  • 3000:$0.8524
  • 1000:$0.8797
  • 500:$0.9778
  • 250:$1.0648
  • 100:$1.1318
  • 25:$1.2881
  • 10:$1.3226
  • 1:$1.4903
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		68In Stock
  • 1000:$1.1603
  • 500:$1.4004
  • 100:$1.8005
  • 10:$2.2410
  • 1:$2.4800
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		68In Stock
  • 1000:$1.1603
  • 500:$1.4004
  • 100:$1.8005
  • 10:$2.2410
  • 1:$2.4800
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.0100
BSC100N10NSFGATMA1
DISTI # 26194995		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		3738
  • 3000:$0.8722
  • 1000:$0.8882
  • 500:$0.9832
  • 250:$1.0653
  • 100:$1.1297
  • 25:$1.2851
  • 10:$1.3201
  • 9:$1.4855
BSC100N10NSFGXT
DISTI # BSC100N10NSFGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 15000
  • 5000:$0.9889
  • 10000:$0.9869
  • 20000:$0.9839
  • 30000:$0.9819
  • 50000:$0.9789
BSC100N10NSF G
DISTI # 726-BSC100N10NSFG		Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
RoHS: Compliant		161
  • 1:$2.0800
  • 10:$1.7700
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
BSC100N10NSFGATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		1514
  • 1000:$1.0400
  • 500:$1.0900
  • 100:$1.1400
  • 25:$1.1900
  • 1:$1.2800
BSC100N10NSFGATMA1Infineon Technologies AGSingle N-Channel 100 V 10 mOhm 44 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.8700
BSC100N10NSFGATMA1
DISTI # 9064375P		Infineon Technologies AGMOSFET N-CH 100V 11.4A OPTIMOS TDSON8, RL95
  • 25:£1.4120
  • 125:£1.1280
  • 250:£1.0580
  • 625:£0.9900
BSC100N10NSFGATMA1
DISTI # C1S322000598902		Infineon Technologies AGMOSFETs
RoHS: Compliant		3738
  • 250:$1.4512
  • 100:$1.4680
  • 25:$1.7295
  • 10:$1.7508
Imagen Parte # Descripción
BSC100N10NSF G

Mfr.#: BSC100N10NSF G

OMO.#: OMO-BSC100N10NSF-G

 MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC100N10NSFGXT

Mfr.#: BSC100N10NSFGXT

OMO.#: OMO-BSC100N10NSFGXT-1190

 Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
BSC100N10NS

Mfr.#: BSC100N10NS

OMO.#: OMO-BSC100N10NS-1190

 Nuevo y original
BSC100N10NSFG

Mfr.#: BSC100N10NSFG

OMO.#: OMO-BSC100N10NSFG-1190

 100V,90A,N Channel Power MOSFET
BSC100N10NSFGATMA1

Mfr.#: BSC100N10NSFGATMA1

OMO.#: OMO-BSC100N10NSFGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 90A TDSON-8
BSC100N10NSF G

Mfr.#: BSC100N10NSF G

OMO.#: OMO-BSC100N10NSF-G-128

 MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de BSC100N10NSFGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,20 US$
1,20 US$
10
1,14 US$
11,40 US$
100
1,08 US$
108,00 US$
500
1,02 US$
510,00 US$
1000
0,96 US$
960,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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