 |  | | |
| PartNumber | APT50GT120JU2 | APT50GT120B2RG | APT50GT120B2RDQ2G |
| Description | IGBT Modules DOR CC0052 | IGBT Transistors FG, IGBT, 1200V, 50A, TO-247 T-MAX, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | - |
| Continuous Collector Current at 25 C | 75 A | - | - |
| Gate Emitter Leakage Current | 500 nA | - | - |
| Pd Power Dissipation | 347 W | - | - |
| Package / Case | SOT-227-4 | - | TO-247-3 |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Through Hole | - | Through Hole |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 1.058219 oz | - | 1.340411 oz |
| Technology | - | Si | Si |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT50GT120JU3 | IGBT Modules DOR CC0053 | |
| APT50GT120JU2 | IGBT Modules DOR CC0052 | ||
| APT50GT60BRDQ2G | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS | ||
| APT50GT120B2RG | IGBT Transistors FG, IGBT, 1200V, 50A, TO-247 T-MAX, RoHS | ||
| APT50GT60BRG | IGBT Transistors FG, IGBT, 600V, TO-247, RoHS | ||
| APT50GT120B2RDQ2G | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS | ||
| APT50GT120LRDQ2G | IGBT Transistors FG, IGBT, 1200V, TO-264, RoHS | ||
| APT50GT60BRDQ2G | IGBT Transistors | ||
| APT50GT120B2RG | Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) T-MAX | ||
| APT50GT120LRG | Nuevo y original |