APT50GT60BRDQ2G

APT50GT60BRDQ2G
Mfr. #:
APT50GT60BRDQ2G
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT50GT60BRDQ2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT50GT60BRDQ2G DatasheetAPT50GT60BRDQ2G Datasheet (P4-P6)APT50GT60BRDQ2G Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
110 A
Pd - Disipación de energía:
446 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
110 A
Altura:
5.31 mm
Longitud:
21.46 mm
Rango de temperatura de funcionamiento:
- 55 C to + 150 C
Ancho:
16.26 mm
Marca:
Microchip / Microsemi
Corriente continua del colector:
110 A
Corriente de fuga puerta-emisor:
120 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Nombre comercial:
Thunderbolt IGBT
Unidad de peso:
1.340411 oz
Tags
APT50GT, APT50G, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 110A 446000mW 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT 600V 110A 446W TO247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***hardson RFPD
POWER IGBT TRANSISTOR
***S
new, original packaged
***ource
Thunderbolt IGBT
***el Nordic
Contact for details
***ure Electronics
IXXH Series GenX3 600 V 100 A Flange Mount IGBT - TO-247AD
***ical
Trans IGBT Chip N-CH 600V 100A 600000mW 3-Pin(3+Tab) TO-247AD
***i-Key
IGBT 600V 100A 600W TO247AD
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***enic
TO-247 IGBTs ROHS
***ical
Trans IGBT Chip N-CH 600V 80A 345000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***et
Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 8 Single 600 V 80 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ical
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247AD
***el Electronic
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-247AD package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps
***trelec
IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Power dissipation: 330 W
***nell
IGBT,N CH,DIODE,600V,96A,TO-247AC; DC Collector Current: 96A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 330W; Collector Emitter Vo; Available until stocks are exhausted Alternative available
***ark
Igbt, 600V, 96A, 175Deg C, 330W; Continuous Collector Current:96A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:330W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4068DPBF
***ical
Trans IGBT Chip N-CH 600V 96A 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***ernational Rectifier
600V UltraFast Trench IGBT in a TO-247 package
***ment14 APAC
TUBE / 600V 96.000A TO-247; TUBE / 600V 96.000A TO-247
***S
French Electronic Distributor since 1988
***nell
IGBT,N CH,600V,96A,TO-247AC; Transistor Type:IGBT; DC Collector Current:96A; Collector Emitter Voltage Vces:1.65V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:330W
Parte # Mfg. Descripción Valores Precio
APT50GT60BRDQ2G
DISTI # V99:2348_09096586
Microsemi CorporationTrans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247
RoHS: Compliant
200
  • 1000:$4.0900
  • 500:$4.6609
  • 250:$5.0780
  • 100:$5.5310
  • 50:$5.7370
  • 25:$6.1440
  • 10:$6.6970
  • 1:$7.3670
APT50GT60BRDQ2G
DISTI # APT50GT60BRDQ2G-ND
Microsemi CorporationIGBT 600V 110A 446W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
75In Stock
  • 1020:$4.8436
  • 510:$5.5612
  • 270:$6.0993
  • 120:$6.6375
  • 30:$7.3550
  • 10:$8.0730
  • 1:$8.9700
APT50GT60BRDQ2G
DISTI # 30571916
Microsemi CorporationTrans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247
RoHS: Compliant
200
  • 100:$5.5310
  • 50:$5.7370
  • 25:$6.1440
  • 10:$6.6970
  • 2:$7.3670
APT50GT60BRDQ2G
DISTI # 494-APT50GT60BRDQ2G
Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
RoHS: Compliant
27
  • 1:$8.3700
  • 10:$7.5300
  • 25:$6.8600
  • 50:$6.3900
  • 100:$6.1900
  • 250:$5.6500
APT50GT60BRDQ2G
DISTI # APT50GT60BRDQ2G
Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant
0
  • 75:$4.3500
  • 100:$4.2400
  • 500:$4.1900
APT50GT60BRDQ2G
DISTI # C1S505800070704
Microsemi CorporationTrans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247
RoHS: Compliant
200
  • 100:$5.5310
  • 50:$5.7370
  • 25:$6.1440
  • 10:$6.6970
  • 1:$7.3670
Imagen Parte # Descripción
OPA549T

Mfr.#: OPA549T

OMO.#: OMO-OPA549T

Operational Amplifiers - Op Amps Hi-Vltg Hi-Current Exc Output Swing
TP1.5KE33CA

Mfr.#: TP1.5KE33CA

OMO.#: OMO-TP1-5KE33CA

TVS Diodes / ESD Suppressors 33V 1.5kW BI-DIR TP1.5KE AEC-Q101
L7805CV

Mfr.#: L7805CV

OMO.#: OMO-L7805CV

Linear Voltage Regulators 5.0V 1.0A Positive
TPS60403DBVR

Mfr.#: TPS60403DBVR

OMO.#: OMO-TPS60403DBVR

Switching Voltage Regulators 60mA Charge Pump Voltage Inverter
T350G106K035AT

Mfr.#: T350G106K035AT

OMO.#: OMO-T350G106K035AT

Tantalum Capacitors - Solid Leaded 35V 10uF 10% LS=2.54mm
FG16C0G1H104JNT06

Mfr.#: FG16C0G1H104JNT06

OMO.#: OMO-FG16C0G1H104JNT06

Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 0.1uF C0G 5% LS:2.5mm
M2011S2A1W01

Mfr.#: M2011S2A1W01

OMO.#: OMO-M2011S2A1W01

Toggle Switches SPST .200 BAT
OPA549T

Mfr.#: OPA549T

OMO.#: OMO-OPA549T-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps Hi-Vltg Hi-Current Exc Output Swing
M2011S2A1W01

Mfr.#: M2011S2A1W01

OMO.#: OMO-M2011S2A1W01-NKK-SWITCHES

Toggle Switches SPST .200 BAT
L7805CV

Mfr.#: L7805CV

OMO.#: OMO-L7805CV-STMICROELECTRONICS

IC REG LINEAR 5V 1.5A TO220AB
Disponibilidad
Valores:
35
En orden:
2018
Ingrese la cantidad:
El precio actual de APT50GT60BRDQ2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,37 US$
8,37 US$
10
7,53 US$
75,30 US$
25
6,86 US$
171,50 US$
100
6,19 US$
619,00 US$
250
5,69 US$
1 422,50 US$
500
5,19 US$
2 595,00 US$
1000
4,52 US$
4 520,00 US$
2500
4,35 US$
10 875,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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