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APT50GT60BRG

APT50GT60BRG
Mfr. #:
APT50GT60BRG
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT50GT60BRG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT50GT60BRG DatasheetAPT50GT60BRG Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
APT50GT, APT50G, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247
***i-Key
IGBT 600V 110A 446W TO247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***hardson RFPD
POWER IGBT TRANSISTOR
***ical
Trans IGBT Chip N-CH 600V 110A 284000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, TO-247
***icroelectronics
60 A, 600 V, very low drop IGBT
*** Electronic Components
IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
***icroelectronics
60 A, 600 V, very low drop IGBT with soft and fast recovery diode
***ical
Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT,W DIODE, 600V, 60A, TO-247; DC Collector Current: 110A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 284W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***p One Stop
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3
***Parts
IGBTs - Single, Transistors N-Channel, PG-TO247-3 100A 600V 333W Through Hole
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***ical
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
***ical
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS
***ment14 APAC
IGBT,600V,50A,TO247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:333W
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
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 Logic Output Optocouplers 2.0A IGBT Gate Drive
HCPL-7800-000E

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 Optically Isolated Amplifiers 4.5 - 5.5 SV 8 dB
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Mfr.#: HCPL-3120-000E

OMO.#: OMO-HCPL-3120-000E-BROADCOM

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Mfr.#: H11G2M

OMO.#: OMO-H11G2M-ON-SEMICONDUCTOR

 OPTOISO 4.17KV DARL W/BASE 6DIP
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 Aluminum Electrolytic Capacitors - Leaded 220uF 50V 20%
Disponibilidad
Valores:
93
En orden:
2076
Ingrese la cantidad:
El precio actual de APT50GT60BRG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,90 US$
6,90 US$
10
6,21 US$
62,10 US$
25
5,65 US$
141,25 US$
100
5,10 US$
510,00 US$
250
4,66 US$
1 165,00 US$
500
4,25 US$
2 125,00 US$
1000
3,71 US$
3 710,00 US$
2500
3,41 US$
8 525,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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