APT50GN

APT50GN60BDQ2G vs APT50GN120L2DQ2G vs APT50GN120B2G

 
PartNumberAPT50GN60BDQ2GAPT50GN120L2DQ2GAPT50GN120B2G
DescriptionIGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHSIGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHSIGBT Transistors FG, IGBT,1200V, T-MAX, RoHS
ManufacturerMicrochipMicrochipMicrochip
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247-3TO-264-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V1.2 kV-
Collector Emitter Saturation Voltage1.5 V1.7 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C107 A134 A-
Pd Power Dissipation366 W543 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
PackagingTubeTubeTube
Continuous Collector Current Ic Max107 A134 A-
Height5.31 mm5.21 mm-
Length21.46 mm26.49 mm-
Operating Temperature Range- 55 C to + 175 C- 55 C to + 150 C-
Width16.26 mm20.5 mm-
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Continuous Collector Current107 A134 A-
Gate Emitter Leakage Current600 nA600 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity111
SubcategoryIGBTsIGBTsIGBTs
Unit Weight1.340411 oz0.373904 oz-
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APT50GN60BG IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
APT50GN60BDQ2G IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
APT50GN120L2DQ2G IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
APT50GN120B2G IGBT Transistors FG, IGBT,1200V, T-MAX, RoHS
APT50GN60BDQ2G IGBT Transistors
APT50GN60BG IGBT Transistors
APT50GN120L2DQ2G IGBT Transistors
APT50GN120B2G IGBT 1200V 134A 543W TO-247
APT50GN120B2 Nuevo y original
APT50GN120L2DQ2 Nuevo y original
APT50GN60BD Nuevo y original
APT50GN60BDQ2 Nuevo y original
APT50GN60BDQ2G IKW50N6 Nuevo y original
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