PartNumber | APT50GN60BDQ2G | APT50GN120L2DQ2G | APT50GN120B2G |
Description | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS | IGBT Transistors FG, IGBT,1200V, T-MAX, RoHS |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-264-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | - |
Collector Emitter Saturation Voltage | 1.5 V | 1.7 V | - |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Continuous Collector Current at 25 C | 107 A | 134 A | - |
Pd Power Dissipation | 366 W | 543 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | - |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 107 A | 134 A | - |
Height | 5.31 mm | 5.21 mm | - |
Length | 21.46 mm | 26.49 mm | - |
Operating Temperature Range | - 55 C to + 175 C | - 55 C to + 150 C | - |
Width | 16.26 mm | 20.5 mm | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Continuous Collector Current | 107 A | 134 A | - |
Gate Emitter Leakage Current | 600 nA | 600 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 1.340411 oz | 0.373904 oz | - |