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APT50GN60BG

APT50GN60BG
Mfr. #:
APT50GN60BG
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT50GN60BG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT50GN60BG DatasheetAPT50GN60BG Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
107 A
Pd - Disipación de energía:
366 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
107 A
Altura:
5.31 mm
Longitud:
21.46 mm
Rango de temperatura de funcionamiento:
- 55 C to + 175 C
Ancho:
16.26 mm
Marca:
Microchip / Microsemi
Corriente continua del colector:
107 A
Corriente de fuga puerta-emisor:
600 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
APT50GN6, APT50GN, APT50G, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 107A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT50GN60 Series 600 V 107 A 325 nC NPT Trench and Field Stop IGBT - TO-247-3
***rochip
IGBT Fieldstop Low Frequency Single 600 V 50 A TO-247
***nsix Microsemi
Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
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***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
***nell
IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available
***ical
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop
Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 80A 260.4W TO247A
***nell
IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ical
Trans IGBT Chip N-CH 600V 76A 268000mW 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 600V, 76A, TO-247AD-3; DC Collector Current: 76A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 268W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of
***ark
Igbt, 600V, 76A, 268W, To-247Ad; Continuous Collector Current:76A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:268W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4069-EPBF..
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***(Formerly Allied Electronics)
G6.2, 600V, 50A, CO-PAK-247AD | Infineon IRGP6650D-EPBF
***i-Key Marketplace
IRGP6650 - DISCRETE IGBT WITH AN
***nell
IGBT, 600V, 80A, TO-247AC-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 306W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***ical
Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 90A 328.9W TO247A
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ment14 APAC
IGBT, HIGH SPEED, 600V, 90A, TO-247A; Transistor Type:IGBT; DC Collector Current:90A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:328.9W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 2A - 4 weeks; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-
Parte # Mfg. Descripción Valores Precio
APT50GN60BG
DISTI # V99:2348_09096449		Microsemi CorporationTrans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247
RoHS: Compliant		118
  • 2500:$3.0640
  • 1000:$3.1360
  • 500:$3.7430
  • 250:$4.2470
  • 100:$4.7510
  • 25:$5.1670
  • 10:$5.3080
  • 1:$6.6580
APT50GN60BG
DISTI # APT50GN60BG-ND		Microsemi CorporationIGBT 600V 107A 366W TO247
RoHS: Compliant
Min Qty: 120
Container: Tube		Temporarily Out of Stock
  • 120:$5.2693
APT50GN60BG
DISTI # 30738095		Microsemi CorporationTrans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247
RoHS: Compliant		118
  • 2500:$3.0640
  • 1000:$3.1360
  • 500:$3.7430
  • 250:$4.2470
  • 100:$4.7510
  • 25:$5.1670
  • 10:$5.3080
  • 2:$6.6580
APT50GN60BG
DISTI # 494-APT50GN60BG		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
RoHS: Compliant		248
  • 1:$6.7100
  • 10:$5.3900
  • 25:$5.3000
  • 100:$4.9200
  • 250:$4.4400
  • 500:$3.9500
  • 1000:$3.3400
  • 2500:$3.0900
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Disponibilidad
Valores:
167
En orden:
2150
Ingrese la cantidad:
El precio actual de APT50GN60BG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,71 US$
6,71 US$
10
5,39 US$
53,90 US$
25
5,30 US$
132,50 US$
100
4,92 US$
492,00 US$
250
4,44 US$
1 110,00 US$
500
3,95 US$
1 975,00 US$
1000
3,34 US$
3 340,00 US$
2500
3,09 US$
7 725,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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