| PartNumber | APT45GP120BG | APT45GP120B2DQ2G | APT45GP120J |
| Description | IGBT Transistors FG, IGBT, 1200V, 45A, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS | IGBT Transistors FG, IGBT, 1200V, 45A, SOT-227 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | T-Max-3 | SOT-227-4 |
| Mounting Style | Through Hole | Through Hole | Chassis Mount |
| Configuration | Single | Single | N-Channel |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 3.3 V | 3.3 V | 3.3 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V | 20 V |
| Continuous Collector Current at 25 C | 100 A | 113 A | 34 A |
| Pd Power Dissipation | 625 W | 625 W | 329 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 100 A | 113 A | 75 A |
| Height | 5.31 mm | 5.31 mm | 9.6 mm |
| Length | 21.46 mm | 21.46 mm | 38.2 mm |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - 55 C to + 150 C |
| Width | 16.26 mm | 16.26 mm | 25.4 mm |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 100 A | 113 A | 75 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | POWER MOS 7 IGBT | POWER MOS 7 IGBT | POWER MOS 7 IGBT, ISOTOP |
| Unit Weight | 1.340411 oz | - | 1.058219 oz |