PartNumber | APT45GP120BG | APT45GP120B2DQ2G | APT45GP120J |
Description | IGBT Transistors FG, IGBT, 1200V, 45A, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS | IGBT Transistors FG, IGBT, 1200V, 45A, SOT-227 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | T-Max-3 | SOT-227-4 |
Mounting Style | Through Hole | Through Hole | Chassis Mount |
Configuration | Single | Single | N-Channel |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 3.3 V | 3.3 V | 3.3 V |
Maximum Gate Emitter Voltage | 30 V | 30 V | 20 V |
Continuous Collector Current at 25 C | 100 A | 113 A | 34 A |
Pd Power Dissipation | 625 W | 625 W | 329 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 100 A | 113 A | 75 A |
Height | 5.31 mm | 5.31 mm | 9.6 mm |
Length | 21.46 mm | 21.46 mm | 38.2 mm |
Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - 55 C to + 150 C |
Width | 16.26 mm | 16.26 mm | 25.4 mm |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Continuous Collector Current | 100 A | 113 A | 75 A |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | POWER MOS 7 IGBT | POWER MOS 7 IGBT | POWER MOS 7 IGBT, ISOTOP |
Unit Weight | 1.340411 oz | - | 1.058219 oz |